VSSOP Flash Memory 1,258

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
NAND512R3A3AV6F	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	15 mA	67108864 words	1.8	NO	1.8	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V	512		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	15000 ns	1.8	NO
NAND512R4A0CV1T	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	32MX16	32M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	1.8
NAND256R3A0CV1	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	32MX8	32M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	268435456 bit	1.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	1.8
NAND128W4A0BV6T	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	8MX16	8M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	134217728 bit	2.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	3
NAND01GW4B3AV6E	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	3	NO	3/3.3	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	1073741824 bit	2.7 V	1K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	35 ns	3	NO
NAND01GR4B2AV6T	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	15 mA	67108864 words	1.8	NO	1.8	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	1073741824 bit	1.7 V	1K	e0				.00005 Amp	15.4 mm	25000 ns	1.8	NO
NAND512R4B2BV6E	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	32MX16	32M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			15.4 mm	25000 ns	1.8
NAND512W3B2CV6T	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	64MX8	64M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	536870912 bit	2.7 V		e0					15.4 mm	25000 ns	3
NAND01GW3B3BV6F	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	128MX8	128M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			15.4 mm	35 ns	3
NAND01GW3B3BV6T	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	128MX8	128M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	1073741824 bit	2.7 V		e0					15.4 mm	35 ns	3
NAND512R4A2BV6E	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	15 mA	33554432 words	1.8	NO	1.8	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	32MX16	32M	-40 Cel	4K	YES		YES	DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V	256		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	15.4 mm	15000 ns	1.8	NO
NAND01GW4B3CV6F	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	64MX16	64M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			15.4 mm	35 ns	3
NAND01GW3B2CV6F	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	128MX8	128M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			15.4 mm	25000 ns	3
NAND128W4A3AV1F	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	134217728 bit	2.7 V	256		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	10000 ns	3	NO
NAND01GR4B2BV1	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	64MX16	64M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	1073741824 bit	1.7 V		e0					15.4 mm	25000 ns	1.8
NAND128W3A1AV1E	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	16MX8	16M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	134217728 bit	2.7 V	512		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	10000 ns	3	NO
NAND512W4B3AV1E	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	33554432 words	3	NO	3/3.3	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	536870912 bit	2.7 V	1K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	35 ns	3	NO
NAND128R4A0CV6E	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	8MX16	8M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		15.4 mm	35 ns	1.8
NAND512R4B2BV1	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	32MX16	32M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V		e0					15.4 mm	25000 ns	1.8
NAND512W3B3CV1T	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	64MX8	64M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	536870912 bit	2.7 V		e0					15.4 mm	35 ns	3
NAND01GW4B2BV1T	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	64MX16	64M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	1073741824 bit	2.7 V		e0					15.4 mm	25000 ns	3
NAND01GW3B3AV6	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	1073741824 bit	2.7 V	2K	e0				.00005 Amp	15.4 mm	35 ns	3	NO
NAND512R3A0CV6E	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	64MX8	64M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		15.4 mm	35 ns	1.8
NAND128W4A3AV1T	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	134217728 bit	2.7 V	256	e0				.00005 Amp	15.4 mm	10000 ns	3	NO
NAND512R3A0BV1	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	64MX8	64M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	1.8
NAND128W3A1AV6F	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	16MX8	16M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	134217728 bit	2.7 V	512		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	10000 ns	3	NO
NAND512R4A2AV1	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	15 mA	33554432 words	1.8	NO	1.8	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	32MX16	32M	0 Cel	4K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V	256	e0			SLC NAND TYPE	.00005 Amp	15.4 mm	35 ns	1.8	NO
NAND512W3B3CV1	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	64MX8	64M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	536870912 bit	2.7 V		e0					15.4 mm	35 ns	3
NAND512R3A2CV6E	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	15 mA	67108864 words	1.8	NO	1.8	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V	512		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	15.4 mm	15000 ns	1.8	NO
NAND512R4A2BV6T	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	32MX16	32M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	1.8
NAND128W4A2AV1E	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	134217728 bit	2.7 V	256		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	15.4 mm	35 ns	3	NO
NAND128R3A3AV1F	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	15 mA	16777216 words	1.8	NO	1.8	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	16MX8	16M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	134217728 bit	1.7 V	512		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	10000 ns	1.8	NO
NAND256W4A0CV1T	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	16MX16	16M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	268435456 bit	2.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	3
NAND128W3A2BV1	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	16MX8	16M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	134217728 bit	2.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	3
NAND512W3B2AV1E	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	67108864 words	3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	64MX8	64M	0 Cel	512	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	536870912 bit	2.7 V	2K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	25000 ns	3	NO
NAND512R3B3BV6T	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	64MX8	64M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V		e0					15.4 mm	35 ns	1.8
NAND256W3A0AV1F	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	32MX8	32M	0 Cel	2K	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	268435456 bit	2.7 V	512		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	15.4 mm	35 ns	3	NO
NAND01GW3B2BV6T	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	128MX8	128M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	1073741824 bit	2.7 V		e0					15.4 mm	25000 ns	3
NAND01GR4B2CV6	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	64MX16	64M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	1073741824 bit	1.7 V		e0					15.4 mm	25000 ns	1.8
NAND512R3B2CV1T	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	64MX8	64M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V		e0					15.4 mm	25000 ns	1.8
NAND128R4A2BV6T	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	8MX16	8M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	134217728 bit	1.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	1.8
NAND256W3A0AV6F	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	32MX8	32M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	268435456 bit	2.7 V	512		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	15.4 mm	35 ns	3	NO
NAND128R4A3AV1T	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	15 mA	8388608 words	1.8	NO	1.8	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	134217728 bit	1.7 V	256	e0				.00005 Amp	15.4 mm	10000 ns	1.8	NO
NAND512R3A0CV6	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	64MX8	64M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	536870912 bit	1.7 V		e0			SLC NAND TYPE		15.4 mm	35 ns	1.8
NAND256W4A0CV6F	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		15.4 mm	35 ns	3
NAND512W3A2BV1E	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	64MX8	64M	0 Cel					DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		15.4 mm	35 ns	3
NAND256R4A3AV6F	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	15 mA	16777216 words	1.8	NO	1.8	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	85 Cel	16MX16	16M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48	1.95 V	.65 mm	12 mm	Not Qualified	268435456 bit	1.7 V	256		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	15.4 mm	10000 ns	1.8	NO
NAND128W3A0AV1	STMicroelectronics	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	Flash Memories	.5 mm	70 Cel	16MX8	16M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	.65 mm	12 mm	Not Qualified	134217728 bit	2.7 V	512	e0			SLC NAND TYPE	.00005 Amp	15.4 mm	35 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.