WSON Flash Memory 60

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25HS256TDPNHB011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHV010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHV011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHB013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHA013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHM011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHA011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHB011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHM010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHA011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHI013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHV013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHM010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHI010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHV013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHA010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHV010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHV013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHI013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHV011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHI011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHM013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHA013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHA010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHA013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHV013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHB011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHV010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHM011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHB013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHM013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHA011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHV011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHA010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHA011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHI011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHB010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHA010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHI013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHM010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHB013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHB010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDSNHB013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHB010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHB010	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS512TDSNHA013	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	67108864 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TFANHM011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8
S25HS256TDPNHI011	Infineon Technologies	FLASH	8	WSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	53 mA	33554432 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel	32MX8	32M	-40 Cel	DUAL	HARDWARE	R-PDSO-N8	2 V	.8 mm	300000 Write/Erase Cycles	133 MHz	6 mm	SPI	268435456 bit	1.7 V	NOR TYPE	.0000013 Amp	8 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.