COMMERCIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F200AMB80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	3 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	150 ns	12	NO
TMS29F259-170JL	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	32KX8	32K		NO		DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified		262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		170 ns	5	YES
TMS29LF040-90C5FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	512KX8	512K	8	YES		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	90 ns	3	YES
TMS28F800ALYB10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						18.4 mm	100 ns	5
TMS28F400AFT70BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G48	5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	70 ns	5	NO
TMS29LF800T-100EL	Texas Instruments	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			512KX16	512K	1,2,1,15	YES	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		100 ns		YES
TMS28F400BZT-70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories	1.27 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	DEEP POWER-DOWN				NOR TYPE	.0000012 Amp	28.2 mm	70 ns	12	NO
TMS29F008T-100BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel			1MX8	1M	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	100 ns	5	YES
TMS29F259-300FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	32KX8	32K		NO		QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.43 mm	Not Qualified		262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	13.97 mm	300 ns	5	YES
TMS28F010A-17C4DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES	3-STATE	128KX8	128K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F200AZT60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	60 ns	12	NO
TMS29LF800B-90BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	1.27 mm	70 Cel		3-STATE	512KX16	512K	1,2,1,15	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	90 ns	2.7	YES
TMS28F800VT10BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY					70 Cel			1MX8	1M				BOTTOM	R-PBGA-B48	3.6 V				Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F010-15C3DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES		128KX8	128K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F010-15C3DDL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel			128KX8	128K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F512A-10C3DDL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	64KX8	64K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS29F010-200JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	128KX8	128K	8	YES		DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		200 ns	5	YES
TMS28F800AZB-80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel			1MX8	1M	1,2,1,7	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE	.000008 Amp	28.2 mm	80 ns	3	NO
TMS28F800AZYB10BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						28.2 mm	100 ns	5
TMS28F200AFT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G48	5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	80 ns	5	NO
TMS29F008T-90BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	1MX8	1M	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	90 ns	5	YES
TMS28F800LT12CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		28.2 mm	120 ns	3
TMS28F008AVB-100CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm	100 ns	3
TMS28F004AET80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	150 ns	5	NO
TMS28F512-12C2NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel			64KX8	64K		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F010A-10C4FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		3-STATE	128KX8	128K				QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES				NOR TYPE		13.97 mm	100 ns	12
TMS28F008ALB12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm	120 ns	3
TMS29F258-30NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	32KX8	32K	512	NO		DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	300 ns	5	YES
TMS29F512-200DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	64KX8	64K				DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.75 V					NOR TYPE		18.415 mm	200 ns	5
TMS28F008EB80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm	120 ns	3
TMS29F258-200FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	32KX8	32K	512	NO		QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.43 mm	Not Qualified		262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	13.97 mm	200 ns	5	YES
TMS29F040-12C5DDL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	8	YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	5	YES
TMS28F210-17C3FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel		3-STATE	64KX16	64K		YES		QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F800VT12CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		18.4 mm	120 ns	3
TMS28F040-15C2DUL4	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel	YES		512KX8	512K	16	YES		DUAL	R-PDSO-G40			100 Write/Erase Cycles				4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		150 ns		YES
TMS29F256-200FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	32KX8	32K	512	NO		QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.43 mm	Not Qualified		262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	13.97 mm	200 ns	5	YES
TMS28F008AZYT10CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						18.4 mm	100 ns	5
TMS29LF008B-90DCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel			1MX8	1M	1,2,1,15	YES	YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		90 ns		YES
TMS29LF800T-120BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel			512KX16	512K	1,2,1,15	YES	YES	DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	120 ns	2.7	YES
TMS28F008ET70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE		18.4 mm	100 ns	3
TMS28F210-10C4DBWL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories	.5 mm	70 Cel		3-STATE	64KX16	64K		YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE	.0001 Amp	12.4 mm	100 ns	12	NO
TMS28F512-17C4FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			64KX8	64K		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO
TMS28F800AEYT12CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						28.2 mm	120 ns	5
TMS28F512-12C3FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			64KX8	64K		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F400AFT80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX16	256K	1,2,1,3	YES		DUAL	R-PDSO-G44	5.5 V	2.625 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER CONFG AS 256K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	80 ns	5	NO
TMS29F010-20NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	128KX8	128K	8	YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp	41.4 mm	200 ns	5	YES
TMS28F200BZT80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel			256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000012 Amp	28.2 mm	80 ns	12	NO
TMS28F008AVYB10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						18.4 mm	100 ns	5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.