Microchip Technology Flash Memory 288

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST26VF032B-104I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified	SPI		33554432 bit	2.7 V		e3		260	NOR TYPE	.000045 Amp	5.26 mm			3
SST26VF064B-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
SST25VF016B-50-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words			3/3.3	1	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		16777216 bit	2.7 V		e4		260	NOR TYPE	.00002 Amp	5.275 mm
SST26VF064BT-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
SST25VF016B-50-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words			3/3.3	1	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		16777216 bit	2.7 V		e4		260	NOR TYPE	.00002 Amp	5.275 mm
SST26VF016B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	2.7 V		e3		260	NOR TYPE	.000025 Amp	4.9 mm			3
SST39VF1601-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories	100	.5 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	512	YES	Matte Tin (Sn) - annealed	DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST25VF040B-50-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words				1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm		SPI		4194304 bit	2.7 V		e3			NOR TYPE	.00003 Amp	4.9 mm
SST26VF032BT-104I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified	SPI		33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	5.26 mm			3
SST26VF032B-104I/SM70SVAO	Microchip Technology	EEPROM
SST26VF064B-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI		67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm			3
SST25VF040B-50-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words				1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm		SPI		4194304 bit	2.7 V		e3			NOR TYPE	.00003 Amp	4.9 mm
SST26VF032B-104V/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.3		100	1.27 mm	105 Cel		4MX8	4M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		33554432 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
SST26VF032BT-104I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI		33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm			3
SST26VF032B-104V/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		100	1.27 mm	105 Cel		4MX8	4M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI		33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm			3
SST25VF080B-50-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		8388608 bit	2.7 V		e4		260	NOR TYPE	.00003 Amp	5.275 mm
SST39SF040-55-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V		e3	40	260	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
SST25VF080B-50-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		8388608 bit	2.7 V		e4		260	NOR TYPE	.00003 Amp	5.275 mm
SST26VF064B-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
SST26VF016B-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm			3
SST39SF010A-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V		e3		245	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
SST25VF016B-50-4C-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words			3/3.3	1	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		16777216 bit	2.7 V		e4			NOR TYPE	.00002 Amp	5.275 mm
SST26VF016B-104I/SN-RN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm			3
SST25VF080B-50-4I-S2AE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words				1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm		SPI		8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00003 Amp	5.275 mm
SST39SF040-55-4I-NHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES		QUAD	1		R-PQCC-J32		5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V					NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
SST25VF016B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words			3/3.3	1	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel			NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		16777216 bit	2.7 V		e4		260	NOR TYPE	.00002 Amp	5.275 mm
SST26VF016BT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	2.7 V		e3		260	NOR TYPE	.000025 Amp	4.9 mm			3
SST26VF064BEUI-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI		67108864 bit	2.7 V		e3	30	260	NOR TYPE	.045 Amp	6 mm
SST25VF040B-50-4I-SAF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	SPI		4194304 bit	2.7 V		e3			NOR TYPE	.00003 Amp	4.9 mm
SST25VF512A-33-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	524288 words			3/3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX1	512K	0 Cel			MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	SPI		524288 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	4.9 mm
SST39SF010A-70-4I-NHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V		e3	40	245	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
SST39SF010A-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	100	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	MATTE TIN	DUAL	1		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			1048576 bit	4.5 V		e3			NOR TYPE	.0001 Amp	41.91 mm		70 ns	5	YES
SST26VF064B-104I/SO	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4	Flash Memories	100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm	Not Qualified	SPI		67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	10.3 mm			3
SST25VF010A-33-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	1048576 words			3/3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel			MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	SPI		1048576 bit	2.7 V		e3	10	260	NOR TYPE	.000015 Amp	4.9 mm
SST39VF1601-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories	100	.5 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	512	YES	MATTE TIN	DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST25VF010A-33-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	1048576 words			3/3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel			MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	SPI		1048576 bit	2.7 V		e3	10	260	NOR TYPE	.000015 Amp	4.9 mm
SST25WF080B-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words	1.8			1	SMALL OUTLINE	SOP8,.23		20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm		SPI		8388608 bit	1.65 V		e3			NOR TYPE	.00001 Amp	4.9 mm			1.8
SST25VF040B-50-4I-SAF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			Matte Tin (Sn)	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	SPI		4194304 bit	2.7 V		e3			NOR TYPE	.00002 Amp	4.9 mm
AT17F16-30CU	Microchip Technology	FLASH																		3.3				Flash Memories										NICKEL GOLD					3						Not Qualified						e4	40	260
SST26VF032BA-104I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified	SPI		33554432 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
SST25VF010A-33-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	1048576 words			3/3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel			MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	SPI		1048576 bit	2.7 V		e3	10	260	NOR TYPE	.000015 Amp	4.9 mm
SST26VF064BEUI-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words				1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		67108864 bit	2.7 V					NOR TYPE	.045 Amp	5.26 mm
SST39SF040-70-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	Matte Tin (Sn)	QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V		e3	40	245	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
SST26VF032BT-104I/SM70SVAO	Microchip Technology	EEPROM
SST26VF016B-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3	Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified	SPI		16777216 bit	2.7 V		e3	40	260	NOR TYPE	.000025 Amp	5.26 mm			3
SST25VF020B-80-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words			3/3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified	SPI		2097152 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	4.9 mm
SST25VF080B-50-4I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words				1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm		SPI		8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00003 Amp	5.275 mm
SST39SF040-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6	Flash Memories	100	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN	DUAL	1		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			4194304 bit	4.5 V		e3			NOR TYPE	.0001 Amp	41.91 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.