Renesas Electronics Flash Memory 969

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
AT25DF011-DWFHT	Renesas Electronics	FLASH	AUTOMOTIVE		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words			1	UNCASED CHIP					125 Cel		1MX1	1M	-40 Cel		UPPER		X-XUUC-N	1	3.6 V		20000 Write/Erase Cycles	104 MHz				1048576 bit	1.7 V						.00006 Amp		1.8
AT25DF512C-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	18 mA	65536 words	3		8	UNCASED CHIP	DIE OR CHIP		20		85 Cel	3-STATE	64KX8	64K	-40 Cel		UPPER	HARDWARE/SOFTWARE	R-XUUC-N		3.6 V		100000 Write/Erase Cycles	104 MHz			SPI	524288 bit	2.3 V					NOR TYPE	.000015 Amp		3
AT25DF256-XMHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words	1.8		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		256KX1	256K	-40 Cel		DUAL		R-PDSO-G8	1	3.6 V	1.2 mm		104 MHz	3 mm			262144 bit	1.65 V							4.4 mm	1.8
AT25SF641B-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	19 mA	67108864 words	3		1	UNCASED CHIP			20		85 Cel	3-STATE	64MX1	64M	-40 Cel		UNSPECIFIED	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	104 MHz			SPI	67108864 bit	2.7 V					NOR TYPE	.000025 Amp		3
AT25XE011-MAHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	13 mA	131072 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm		SPI	1048576 bit	1.65 V	ALSO OPERATES WITH 2.3VMIN SUPPLY	e4			NOR TYPE	.00004 Amp	3 mm	1.8
AT25QL641-UUE-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	25 mA	67108864 words	1.8		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,4X6,20			.5 mm	85 Cel		64MX1	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1	2 V	.52 mm	100000 Write/Erase Cycles	133 MHz	1.924 mm		SPI	67108864 bit	1.7 V						.00005 Amp	3.007 mm	1.8
AT25QL128A-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	UNCASED CHIP					85 Cel		128MX1	128M	-40 Cel		UPPER		X-XUUC-N		2 V			104 MHz				134217728 bit	1.7 V								1.8
AT25PE16-SSHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		1	SMALL OUTLINE				1.27 mm	85 Cel		16MX1	16M	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		85 MHz	3.9 mm			16777216 bit	2.3 V							4.925 mm	1.8
AT25FF041A-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8		2	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	2MX2	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm		SPI	4194304 bit	1.65 V					NOR TYPE	.00005 Amp	4.925 mm	1.8
AT45DQ321-MHF-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	22 mA	4194304 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI	33554432 bit	2.3 V					NOR TYPE	.00005 Amp	6 mm	3
AT45DQ321-SHFHJ-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	22 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.24 mm		SPI	33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.29 mm	3
AT45DB321F-DWF	Renesas Electronics	FLASH 1.8V PROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	UNCASED CHIP					85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		3.6 V			104 MHz				33554432 bit	1.65 V
AT25EU0011A	Renesas Electronics	FLASH
AT25XE021A-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8		1	SMALL OUTLINE				1.27 mm	85 Cel		2MX1	2M	-40 Cel		DUAL		R-PDSO-G8	1	3.6 V	1.75 mm		70 MHz	3.9 mm			2097152 bit	1.65 V							4.925 mm	1.8
AT25XE041B-SSHNHR-B	Renesas Electronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4194304 words			1	SMALL OUTLINE					125 Cel		4MX1	4M	-40 Cel		DUAL		R-PDSO-G8		3.6 V			85 MHz				4194304 bit	1.7 V								1.8
AT45DB322F-DWF	Renesas Electronics	FLASH 1.8V PROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	UNCASED CHIP					85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		3.6 V			104 MHz				33554432 bit	1.65 V
AT45DB021E-SSHNHC-T	Renesas Electronics	FLASH																											Nickel/Palladium/Gold (Ni/Pd/Au)															e4
AT25FF161A-SSPN-T	Renesas Electronics	FLASH
AT25PE20-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3		8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm		SPI	2097152 bit	2.3 V		e4			NOR TYPE	.000012 Amp	4.925 mm	3
AT25DF021A-MAHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8		1	SMALL OUTLINE					125 Cel		2MX1	2M	-40 Cel		DUAL		R-PDSO-N8	1	3.6 V			85 MHz				2097152 bit	1.7 V					NOR TYPE			1.8
AT25DF041B-XMHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	1.8		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		4MX1	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	1	3.6 V	1.2 mm		104 MHz	3 mm			4194304 bit	1.65 V		e4			NOR TYPE		4.4 mm	1.8
AT45DB021E-MHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	2097152 words	1.8	1.8/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	70 MHz	5 mm	Not Qualified	SPI	2097152 bit	1.65 V		e4			NOR TYPE	.000008 Amp	6 mm	2.7
AT25DF021A-MHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	1.8		1	SMALL OUTLINE					125 Cel		2MX1	2M	-40 Cel		DUAL		R-PDSO-N8		3.6 V			85 MHz				2097152 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE			1.8
AT25SL321-DWF	Renesas Electronics	FLASH	INDUSTRIAL	11	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	UNCASED CHIP					85 Cel		32MX1	32M	-40 Cel		UPPER		R-XUUC-N11		2 V			104 MHz	1.596 mm			33554432 bit	1.7 V							2.329 mm	1.8
AT25PE40-MHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel		4MX1	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	5 mm		SPI	4194304 bit	2.3 V	IT ALSO OPERATES AT FREQUENCY 70 MHZ AT 1.65 TO 3.6 V SUPPLY VOLTAGE					.00004 Amp	6 mm	1.8
AT45DQ161-SSHF2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	26 mA	2097152 words	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	Flash Memories	20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified	SPI	16777216 bit	2.3 V					NOR TYPE	.000015 Amp	4.925 mm	3
AT25FF041A-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8		2	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel	3-STATE	2MX2	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm		SPI	4194304 bit	1.65 V					NOR TYPE	.00005 Amp	5.29 mm	1.8
AT45DB041E-SHNHT-B	Renesas Electronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4194304 words			1	SMALL OUTLINE					125 Cel		4MX1	4M	-40 Cel		DUAL		R-PDSO-G8	1	3.6 V			85 MHz				4194304 bit	1.65 V								1.8
AT25XE041B-MHN-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		4MX1	4M	-40 Cel		DUAL		R-PDSO-N8	1	3.6 V	.6 mm		85 MHz	5 mm			4194304 bit	1.65 V							6 mm	1.8
AT45DB321F-MHN-Y	Renesas Electronics	FLASH 1.8V PROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.6 mm		104 MHz	5 mm			33554432 bit	1.65 V							6 mm
AT25XE321B-SHN-B	Renesas Electronics																												Nickel/Palladium/Gold (Ni/Pd/Au)															e4
AT25XV021A-SSHV-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8		1	SMALL OUTLINE				1.27 mm	85 Cel		2MX1	2M	-40 Cel		DUAL		R-PDSO-G8	1	4.4 V	1.75 mm		70 MHz	3.9 mm			2097152 bit	1.65 V							4.925 mm	1.8
AT45DB041E-SSHNHT-B	Renesas Electronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4194304 words			1	SMALL OUTLINE					125 Cel		4MX1	4M	-40 Cel		DUAL		R-PDSO-G8	1	3.6 V			85 MHz				4194304 bit	1.65 V								1.8
AT25XE021A-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2097152 words	1.8		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		2MX1	2M	-40 Cel		BOTTOM		R-PBGA-B8		3.6 V	.35 mm		70 MHz	1.355 mm			2097152 bit	1.65 V							1.575 mm	1.8
AT25DF021A-SSHNHR-B	Renesas Electronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8		1	SMALL OUTLINE					125 Cel		2MX1	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	1	3.6 V			85 MHz				2097152 bit	1.7 V		e4		260				1.8
AT25EU0041A	Renesas Electronics	FLASH
AT25DF041B-XMHNHR-B	Renesas Electronics	FLASH	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		524288 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		512KX8	512K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	20000 Write/Erase Cycles	85 MHz	3 mm		SPI	4194304 bit	1.7 V						.000065 Amp	4.4 mm
AT45DQ321-SHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	22 mA	4194304 words	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.3	Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.24 mm	Not Qualified	SPI	33554432 bit	2.3 V					NOR TYPE	.00005 Amp	5.29 mm	3
AT45DB081E-UUN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,20		20	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8		3.6 V	.52 mm	100000 Write/Erase Cycles	133 MHz	1.605 mm		SPI	8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE				NOR TYPE	.00004 Amp	2.317 mm	3
AT25FF161A-MHN-T	Renesas Electronics	FLASH
AT45DB322F-MHN-Y	Renesas Electronics	FLASH 1.8V PROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.6 mm		104 MHz	5 mm			33554432 bit	1.65 V							6 mm
AT25FF041A-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8		2	UNCASED CHIP			20		85 Cel	3-STATE	2MX2	2M	-40 Cel		UPPER	HARDWARE/SOFTWARE	X-XUUC-N		3.6 V		100000 Write/Erase Cycles	133 MHz			SPI	4194304 bit	1.65 V					NOR TYPE	.00005 Amp		1.8
AT25SF041-SHDHR-B	Renesas Electronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4194304 words			1	SMALL OUTLINE					125 Cel		4MX1	4M	-40 Cel		DUAL		R-PDSO-G8		3.6 V			85 MHz				4194304 bit	2.5 V								2.7
AT25XE011-XMHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	13 mA	131072 words	1.8		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		20	.65 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	3 mm		SPI	1048576 bit	1.65 V	ALSO OPERATES WITH 2.3VMIN SUPPLY	e4			NOR TYPE	.00004 Amp	4.4 mm	1.8
AT25QL321-DWF	Renesas Electronics	FLASH	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		1	UNCASED CHIP					85 Cel		32MX1	32M	-40 Cel		UPPER		X-XUUC-N		2 V			104 MHz				33554432 bit	1.7 V								1.8
AT25SF161B-UUB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,14/8		20	.35 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1	3.6 V	.462 mm	100000 Write/Erase Cycles	108 MHz	1.348 mm		SPI	16777216 bit	2.7 V					NOR TYPE	.00003 Amp	1.608 mm	3
AT25DN011-XMHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1MX1	1M	-40 Cel		DUAL		R-PDSO-G8	1	3.6 V	1.2 mm		104 MHz	3 mm			1048576 bit	2.3 V							4.4 mm	3
AT45DQ321-MWHF2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	22 mA	4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	1 mm	100000 Write/Erase Cycles	104 MHz	6 mm		SPI	33554432 bit	2.3 V					NOR TYPE	.00005 Amp	8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.