Renesas Electronics Flash Memory 969

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT25SL321-UUE-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		25 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,20			20	.5 mm	85 Cel		3-STATE	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1	2 V	.52 mm	100000 Write/Erase Cycles	104 MHz	1.551 mm			SPI		33554432 bit	1.7 V				NOR TYPE	.00005 Amp	2.284 mm			1.8
AT25XE041B-XMHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	1.8			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			4MX1	4M	-40 Cel					DUAL		R-PDSO-G8	1	3.6 V	1.2 mm		85 MHz	3 mm					4194304 bit	1.65 V						4.4 mm			1.8
AT25XE321D-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	UNCASED CHIP				20		85 Cel		3-STATE	2MX16	2M	-40 Cel					UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	133 MHz				SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY			NOR TYPE	.00005 Amp				1.8
AT25XE321D-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4	260	NOR TYPE	.00005 Amp	5.29 mm			1.8
AT25XE321D-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4	260	NOR TYPE	.00005 Amp	5.29 mm			1.8
AT25XE321D-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4	260	NOR TYPE	.00005 Amp	4.925 mm			1.8
AT25XE321D-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4	260	NOR TYPE	.00005 Amp	4.925 mm			1.8
AT45DB021D-SH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel			2MX1	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8	1	3.6 V	2.16 mm		66 MHz	5.24 mm					2097152 bit	2.7 V		e4	260			5.29 mm			2.7
AT45DB021D-SSH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel			2MX1	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8	1	3.6 V	1.75 mm		66 MHz	3.9 mm					2097152 bit	2.7 V		e4	260			4.925 mm			2.7
AT45DB021E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel			2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	3.6 V	2.16 mm		70 MHz	5.24 mm					2097152 bit	1.65 V		e4	260	NOR TYPE		5.29 mm			2.7
AT45DB021E-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16 mA	2097152 words	1.8		1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel			2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	1.65 V		e4		NOR TYPE	.000008 Amp	4.925 mm			2.7
AT45DB041E-SSHNHC-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3		1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.3 V		e4		NOR TYPE	.00004 Amp	4.925 mm			3
AT25DN011-SSHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1048576 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel			1MX1	1M	-40 Cel					DUAL		R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm					1048576 bit	2.3 V						4.925 mm			3
AT25FF321A-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4		NOR TYPE	.00005 Amp	4.925 mm			3.3
AT25SF128A-SHB-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words				8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		134217728 bit	2.7 V				NOR TYPE	.000025 Amp	5.29 mm
AT25XE161D-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		17.5 mA	2097152 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,14/8			20	.35 mm	85 Cel		3-STATE	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1	3.6 V	.462 mm	100000 Write/Erase Cycles	108 MHz	1.737 mm			SPI		16777216 bit	1.65 V				NOR TYPE	.00005 Amp	1.767 mm			1.8
AT45DB021E-SHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel			2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	3.6 V	2.16 mm		70 MHz	5.24 mm					2097152 bit	1.65 V		e4	260			5.29 mm			2.7
AT45DB161E-MHF2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	70 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.3 V		e4		NOR TYPE	.00001 Amp	6 mm			2.7
AT25DF641-MWH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel			8MX8	8M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm	Not Qualified	5 ms			67108864 bit	2.7 V		e4	260	NOR TYPE		8 mm			2.7
UPD29F032203AL-XB85BGZ	Renesas Electronics
HN29W1601TT-8	Renesas Electronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			2MX8	2M	0 Cel			TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				16777216 bit	3 V		e0		NOR TYPE		18.4 mm		80 ns	3
HB28D096C8H	Renesas Electronics	FLASH CARD	COMMERCIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			50331648 words	3.3			16	MICROELECTRONIC ASSEMBLY						60 Cel			48MX16	48M	0 Cel					UNSPECIFIED		R-XXMA-X50		3.465 V					Not Qualified				805306368 bit	3.135 V	CAN ALSO OPERATE WITH 5V SUPPLY			NOR TYPE				250 ns	3.3
UPD29F008LGZ-B15T-LKH	Renesas Electronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	YES		1MX8	1M	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified			TOP	8388608 bit			e0		NOR TYPE	.000005 Amp			150 ns		YES
UPD29F032204AL-YB85TF9-BS2	Renesas Electronics
UPD29F032202ALGZ-A85TY-MJH	Renesas Electronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	33554432 bit					NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F032203AL-XB85TF9-BS2	Renesas Electronics
UPD29F032202ALGZ-B85BY-MJH	Renesas Electronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES		YES	DUAL		R-PDSO-G48							Not Qualified			BOTTOM	33554432 bit					NOR TYPE	.000005 Amp		YES	85 ns		YES
HB2881000A5	Renesas Electronics	FLASH		68		UNSPECIFIED	UNSPECIFIED	NO			UNSPECIFIED										MICROELECTRONIC ASSEMBLY																UNSPECIFIED		X-XXMA-X68							Not Qualified														3.3
HB28B064C6	Renesas Electronics	FLASH CARD	COMMERCIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	MICROELECTRONIC ASSEMBLY						60 Cel			32MX16	32M	0 Cel					UNSPECIFIED		R-XXMA-X50		3.45 V					Not Qualified				536870912 bit	3.15 V	ALSO OPERATES AT 5V SUPPLY			NOR TYPE				250 ns	3.3
UPD29F008ALGZ-B90TXLJH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified			TOP	8388608 bit			e0		NOR TYPE	.000005 Amp			90 ns		YES
UPD29F800ALGZ-B12BXMJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified			BOTTOM	8388608 bit			e0		NOR TYPE	.000005 Amp			120 ns		YES
UPD29F800LGX-B12T-MKH	Renesas Electronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	524288 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	YES		512KX16	512K	0 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified			TOP	8388608 bit			e0		NOR TYPE	.000005 Amp			120 ns		YES
HB288256C6	Renesas Electronics	FLASH CARD	COMMERCIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	MICROELECTRONIC ASSEMBLY						60 Cel			128MX16	128M	0 Cel					UNSPECIFIED		R-XXMA-X50		3.45 V					Not Qualified				2147483648 bit	3.15 V	ALSO OPERATES AT 5V SUPPLY			NOR TYPE				250 ns	3.3
UPD29F032202AL-XA85BF9-BS2	Renesas Electronics
HN29W1601FP-8	Renesas Electronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE					1.27 mm	70 Cel			2MX8	2M	0 Cel			TIN LEAD		DUAL		R-PDSO-G44		3.6 V	3 mm			12.6 mm	Not Qualified				16777216 bit	3 V		e0		NOR TYPE		28.5 mm		80 ns	3
UPD29F008ALGZ-B90BXLKH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	YES		1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified			BOTTOM	8388608 bit			e0		NOR TYPE	.000005 Amp			90 ns		YES
UPD29F008ALGZ-C15BXLJH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	2.2/2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified			BOTTOM	8388608 bit			e0		NOR TYPE	.000005 Amp			150 ns		YES
HN29W1601FP-12	Renesas Electronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE					1.27 mm	70 Cel			2MX8	2M	0 Cel			TIN LEAD		DUAL		R-PDSO-G44		3.6 V	3 mm			12.6 mm	Not Qualified				16777216 bit	3 V		e0		NOR TYPE		28.5 mm		150 ns	3
HB28B128C8C	Renesas Electronics	FLASH CARD	COMMERCIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			16	MICROELECTRONIC ASSEMBLY						60 Cel			64MX16	64M	0 Cel					UNSPECIFIED		R-XXMA-X50		3.465 V					Not Qualified				1073741824 bit	3.135 V	CAN ALSO OPERATE WITH 5V SUPPLY			NOR TYPE				250 ns	3.3
UPD29F032204AL-YB85BF9-BS2	Renesas Electronics
HB28B512A6	Renesas Electronics	FLASH CARD	COMMERCIAL	68		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	MICROELECTRONIC ASSEMBLY						60 Cel			256MX16	256M	0 Cel					UNSPECIFIED		R-XXMA-X68		3.45 V					Not Qualified				4294967296 bit	3.15 V	ALSO OPERATES AT 5V SUPPLY			NOR TYPE				250 ns	3.3
UPD29F032203ALGZ-A85TX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			2MX16	2M	-25 Cel	8,63	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	33554432 bit					NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F800LGX-B15B-MJH	Renesas Electronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	524288 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified			BOTTOM	8388608 bit			e0		NOR TYPE	.000005 Amp			150 ns		YES
UPD29F008LGZ-B15T-LJH	Renesas Electronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			1MX8	1M	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified			TOP	8388608 bit			e0		NOR TYPE	.000005 Amp			150 ns		YES
UPD29F032203AL-YB85BF9-BS2	Renesas Electronics
HB288064C5	Renesas Electronics	FLASH CARD	COMMERCIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			1	MICROELECTRONIC ASSEMBLY					1.27 mm	60 Cel			64MX1	64M	0 Cel					UNSPECIFIED		R-XXMA-X50		3.45 V	3.3 mm			36.4 mm	Not Qualified				67108864 bit	3.15 V	ALSO OPERATES WITH 4.5V-5.5V SUPPLY			NOR TYPE		42.8 mm		250 ns	3.3
UPD29F008LGZ-B12T-LKH	Renesas Electronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	45 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	YES		1MX8	1M	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified			TOP	8388608 bit			e0		NOR TYPE	.000005 Amp			120 ns		YES
UPD29F032203AL-XA85BGZ	Renesas Electronics

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.