Texas Instruments Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F008LT10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M	0 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F008LT12CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008ASYB12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K	0 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					18.4 mm	120 ns	5
TMS28F800ASYT10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M	0 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					18.4 mm	100 ns	5
TMS29F002RB70CFML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				1.27 mm	70 Cel			256KX8	256K	0 Cel				QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.43 mm	Not Qualified		2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O			NOR TYPE		13.97 mm	70 ns	5
TMS28F400AMB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G48	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	110 ns	12	NO
TMS29F010-20JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories	2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel	8	YES		DUAL	R-GDIP-T32	5.5 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		200 ns	5	YES
TMS28F020-17C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel		YES		TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F008SZB-70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F512-10C3DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	85 Cel	YES		64KX8	64K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F400ASB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	3 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	110 ns	5	NO
TMS28F800EB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M	0 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE		28.2 mm	100 ns	3
TMS28F800AZYB12CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					28.2 mm	120 ns	5
TMS28F200AET70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	2.7 V	CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	130 ns	5	NO
TMS29F008B-100BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	100 ns	5	YES
TMS28F010B-10C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F002AST80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	150 ns	5	NO
TMS28F800ALYT10CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M	0 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					18.4 mm	100 ns	5
TMS28F010A-12C3NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES			NOR TYPE		41.4 mm	120 ns	12
TMS28F800AEB-70BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,7	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	28.2 mm	100 ns	3	NO
TMS28F512-17C2FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			64KX8	64K	0 Cel		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO
TMS28F512-15C4DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES		64KX8	64K	0 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F512-12C3NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			64KX8	64K	-40 Cel		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F200AEB80BDBJE	Texas Instruments	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	150 ns	5	NO
TMS28F008ASB-70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	1.27 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,7	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	100 ns	3	NO
TMS28F004AFB80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	80 ns	5	NO
TMS28F800ST80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F210-17C3NL4	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	64KX16	64K	0 Cel		YES		DUAL	R-PDIP-T40	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	170 ns	12	NO
TMS28F002AEB80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	150 ns	5	NO
TMS28F040-17C2DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	125 Cel	YES		512KX8	512K	-40 Cel	16	YES		DUAL	R-PDSO-G40			100 Write/Erase Cycles				4194304 bit			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		170 ns		YES
TMS28F512A-15C3FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS28F800AVT-100BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS29LF008B-100CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	100 ns	3	YES
TMS28F002AFB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	80 ns	5	NO
TMS29F002B-80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP40,.79		Flash Memories	.5 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	80 ns	5	YES
TMS28F010B-15C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS29LF008T-90DCDQB	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	125 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles			TOP	8388608 bit			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		90 ns		YES
TMS28F400AET70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	2.7 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	130 ns	5	NO
TMS28F004AFT60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP			NOR TYPE		28.2 mm	60 ns	5
TMS28F210-10C3NL	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	64KX16	64K	0 Cel		YES		DUAL	R-PDIP-T40	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	100 ns	12	NO
TMS28F512A-10C4DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES	3-STATE	64KX8	64K	0 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F008AVYT10CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK					18.4 mm	100 ns	5
TMS28F400BZT-90CDBRQ	Texas Instruments	FLASH	AUTOMOTIVE	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories	.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES		DUAL	R-PDSO-G56	5.5 V	1.2 mm	100000 Write/Erase Cycles	14 mm	Not Qualified	TOP	4194304 bit	4.5 V	DEEP POWER-DOWN			NOR TYPE	.000008 Amp	18.4 mm	90 ns	12	NO
TMS28F002AFT80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	80 ns	5	NO
TMS29F010-70C5FME	Texas Instruments	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel	8	YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
TMS28F512-12C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			64KX8	64K	-40 Cel		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F400AFB60CDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES		DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	60 ns	5	NO
TMS29F400B-120BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48			10000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		120 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.