Toshiba Flash Memory 776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
THGBMNG5D1LBAIT	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			4294967296 words				8	GRID ARRAY					85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						34359738368 bit	2.7 V						MLC NAND TYPE					2.7
THGBMNG5D1LBAIL	Toshiba	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4294967296 words				8	GRID ARRAY	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V			11 mm			34359738368 bit	2.7 V								13 mm
THGBM5G5A1JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					4294967296 words				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						34359738368 bit	2.7 V						NAND TYPE					2.7
THGAF8G8T23BAIL	Toshiba	FLASH CARD		153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL				34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153							274877906944 bit							NAND TYPE
TC58NVG2S0HTAI0	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		512MX8	512M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			4294967296 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
TC58CVG2S0HRAIG	Toshiba	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			1073741824 words				4	SMALL OUTLINE		2			85 Cel		1GX4	1G	-40 Cel					DUAL	R-PDSO-N8	3.6 V						4294967296 bit	2.7 V	IT ALSO ORGANIZED AS 4G X 1			NOT SPECIFIED	NOT SPECIFIED						2.7
TC58BVG0S3HTAI0	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			1073741824 bit	2.7 V								18.4 mm			3.3
TH58NVG4S0HTAK0	Toshiba	FLASH																																																					3.3
TC58NVG2S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			Not Qualified		4294967296 bit	2.7 V		2K		10	260		.00005 Amp	18.4 mm		25 ns	3.3	NO
TC58FVM6B2ATG65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	4194304 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	67108864 bit	2.3 V	IT ALSO OPERATES AT 2.7 TO 3.6 VOLT	8/16		30	260	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	2.7	YES
TC58FVM6T5BTG65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58FVT160AFT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	YES	80 ns	3	YES
TC58NVG1S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			Not Qualified		2147483648 bit	2.7 V		2K					.00005 Amp	18.4 mm		25 ns	3.3	NO
THGBF7G8K4LBATR	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY					85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						274877906944 bit	2.7 V						MLC NAND TYPE					2.7
TH58BYG2S3HBAI4	Toshiba	FLASH																																																SLC NAND TYPE					3.3
TC58FVB160AFT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	YES	80 ns	3	YES
TH58BYG3S0HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B67	1.95 V	1 mm		6.5 mm			8589934592 bit	1.7 V								8 mm			1.8
KBG30ZMS256G	Toshiba	FLASH MODULE			SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD		ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					80 Cel		256GX8	256G	0 Cel					SINGLE	R-XSMA-N							2199023255552 bit												3.3
THGBMAG6A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					8589934592 words				8						85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						68719476736 bit	2.7 V						NAND TYPE					2.7
TC58FVM5B2AXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X12,32	8		.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm	100000 Write/Erase Cycles	7 mm		BOTTOM	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
THGBM5G8A4JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						274877906944 bit	2.7 V						NAND TYPE					2.7
TC58NVG0S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm					1073741824 bit	2.7 V								18.4 mm			3.3
THGBMAG5A1JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					4294967296 words				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						34359738368 bit	2.7 V						NAND TYPE					2.7
KBG40ZPZ128G	Toshiba	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED		ASYNCHRONOUS			137438953472 words	1.2			8	MICROELECTRONIC ASSEMBLY					85 Cel		128GX8	128G	0 Cel					UNSPECIFIED	R-XXMA-X							1099511627776 bit		ALSO OPERATES WITH 1.8V NOM AND 3.3V NOM SUPPLY										1.2
KSG6AZSE512G	Toshiba	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED		ASYNCHRONOUS			549755813888 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					UNSPECIFIED	R-XXMA-X							4398046511104 bit							TLC NAND TYPE					5
PX04PRC100	Toshiba	FLASH MODULE																																																					12
THNCF064MMA	Toshiba	FLASH CARD	COMMERCIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	MICROELECTRONIC ASSEMBLY					70 Cel		32MX16	32M	0 Cel			TIN LEAD		UNSPECIFIED	R-XXMA-X50	3.6 V				Not Qualified		536870912 bit	3 V	CAN ALSO OPERATE AT 5V SUPPLY		e0							250 ns	3.3
TH58BVG2S3HTA00	Toshiba	FLASH																																																SLC NAND TYPE					3.3
TH58BYG2S3HBAI6	Toshiba	FLASH																																																SLC NAND TYPE					1.8
KSG60ZSE512G	Toshiba	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED		ASYNCHRONOUS			549755813888 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					UNSPECIFIED	R-XXMA-X							4398046511104 bit							TLC NAND TYPE					5
THGVS4G4D1EBAI4	Toshiba
THNCF016MAA	Toshiba	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	MICROELECTRONIC ASSEMBLY					60 Cel		8MX16	8M	0 Cel					UNSPECIFIED	X-XXMA-X50	5.5 V				Not Qualified		134217728 bit	3 V										100 ns	3.3
THNCF128MBAI	Toshiba	FLASH CARD	INDUSTRIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			16	MICROELECTRONIC ASSEMBLY					85 Cel		64MX16	64M	-40 Cel					UNSPECIFIED	R-XXMA-X50	3.6 V				Not Qualified		1073741824 bit	3 V	ALSO OPERATES WITH 5V SUPPLY									250 ns	3.3
KCM5DVUG6T40	Toshiba	FLASH MODULE				RECTANGULAR			1	CMOS			ASYNCHRONOUS			6871947673600 words	12			8						60 Cel		6400GX8	6400G	0 Cel							13.2 V						54975581388800 bit	10.8 V
KSG60ZMV256G	Toshiba	FLASH MODULE			SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD		ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					80 Cel		256GX8	256G	0 Cel					SINGLE	R-XSMA-N							2199023255552 bit							TLC NAND TYPE					3.3
KBG3AZMS128G	Toshiba	FLASH MODULE			SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD		ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					80 Cel		128GX8	128G	0 Cel					SINGLE	R-XSMA-N							1099511627776 bit												3.3
THNAT128MBAI	Toshiba	FLASH CARD	INDUSTRIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			16	MICROELECTRONIC ASSEMBLY					85 Cel		64MX16	64M	-40 Cel					UNSPECIFIED	X-XXMA-X68	3.6 V				Not Qualified		1073741824 bit	3 V	CAN ALSO OPERATE AT 5V SUPPLY									250 ns	3
THN-M203K0320EA(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					UPPER	R-XUUC-N		1 mm		11 mm			274877906944 bit							NOR TYPE		15 mm
THNCF016MBAI	Toshiba	FLASH CARD	INDUSTRIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	MICROELECTRONIC ASSEMBLY					85 Cel		8MX16	8M	-40 Cel			TIN LEAD		UNSPECIFIED	R-XXMA-X50	3.6 V				Not Qualified		134217728 bit	3 V	ALSO OPERATES WITH 5V SUPPLY		e0							250 ns	3.3
THNCF064MAA	Toshiba	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	MICROELECTRONIC ASSEMBLY					60 Cel		32MX16	32M	0 Cel					UNSPECIFIED	X-XXMA-X50	5.5 V				Not Qualified		536870912 bit	3 V										100 ns	3.3
KCM5DVUG800G	Toshiba	FLASH MODULE				RECTANGULAR			1	CMOS			ASYNCHRONOUS			858993459200 words	12			8						60 Cel		800GX8	800G	0 Cel							13.2 V						6871947673600 bit	10.8 V
KCM5FRUG960G	Toshiba	FLASH MODULE	COMMERCIAL			RECTANGULAR			1	CMOS			ASYNCHRONOUS			1030792151040 words	12									60 Cel		960GX8	960G	0 Cel							13.2 V						8246337208320 bit	10.8 V
KCM5DV4C800G	Toshiba	FLASH MODULE							1	CMOS			ASYNCHRONOUS			858993459200 words	12									60 Cel		800GX8	800G	0 Cel							13.2 V						6871947673600 bit	10.8 V
KPM51MUG400G	Toshiba	FLASH MODULE																																																					5
KPM5VVUG6T40	Toshiba	FLASH MODULE	COMMERCIAL			RECTANGULAR		NO	1	CMOS		SERIAL				6871947673600 words	12			8						60 Cel		6400GX8	6400G	0 Cel							13.2 V						54975581388800 bit	10.8 V						NOR TYPE					12
KCM51R4C960G	Toshiba	FLASH MODULE																																																					12
KCM5XR4C7T68	Toshiba	FLASH MODULE				RECTANGULAR			1	CMOS			ASYNCHRONOUS			8246337208320 words	12			8						60 Cel		7680GX8	7680G	0 Cel							13.2 V						65970697666560 bit	10.8 V
KCM5DR4C960G	Toshiba	FLASH MODULE				RECTANGULAR			1	CMOS			ASYNCHRONOUS			1030792151040 words	12			8						60 Cel		960GX8	960G	0 Cel							13.2 V						8246337208320 bit	10.8 V

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.