Flash Memory

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST25VF040B-50-4I-SAF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words				3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	SPI		4194304 bit	2.7 V			e3			NOR TYPE	.00002 Amp	4.9 mm
AT17F16-30CU	Microchip Technology	FLASH																			3.3					Flash Memories										NICKEL GOLD						3						Not Qualified							e4	40	260
M29W320EB70ZE6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
SST26VF032BA-104I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3			3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified	SPI		33554432 bit	2.7 V			e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
W25Q64JWSSIQ	Winbond Electronics	FLASH																																																						NOT SPECIFIED	NOT SPECIFIED
M25P40-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			15 mA	524288 words				2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4194304 bit					30	260	NOR TYPE	.00001 Amp				2.7
S25FL064LABMFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3				4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					5.28 mm			3
SST25VF010A-33-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	1048576 words				3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	SPI		1048576 bit	2.7 V			e3	10	260	NOR TYPE	.000015 Amp	4.9 mm
SST26VF064BEUI-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words					1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		67108864 bit	2.7 V						NOR TYPE	.045 Amp	5.26 mm
SST39SF040-70-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5		YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V			e3	40	245	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
IS25LP016D-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3				8	SMALL OUTLINE	SOP8,.25	1		20	1.27 mm	105 Cel	3-STATE	2MX8	2M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm		SPI		16777216 bit	2.3 V			e3		260	NOR TYPE	.00002 Amp	4.9 mm			3
S29GL128S90TFI023	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3		YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
IS25LP032D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3				8	SMALL OUTLINE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				33554432 bit	2.3 V				30	250			5.28 mm			3
SST26VF032BT-104I/SM70SVAO	Microchip Technology	EEPROM
W25Q128JVPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI		134217728 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	6 mm			3.3
MT29F4G08ABADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
EPCS4SI8	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3			3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	512KX8	512K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			4194304 bit	2.7 V			e0				.00005 Amp
MTFC32GAZAQHD-IT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words					8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	95 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	.9 mm			11.5 mm				274877906944 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
S25FL256LAGNFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3				8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	8 mm			3
S25FL512SAGMFIG11	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
S29JL032J70TFI420	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
W25Q16JVSNIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3.3				8	SMALL OUTLINE		1			1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm				16777216 bit	3 V	ALSO IT OPERATES AT 2.7V TO 3V WITH 104 MHZ			NOT SPECIFIED	NOT SPECIFIED			4.85 mm			3
AT45DB641E-MHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	2.3				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	3.6 V	.6 mm		85 MHz	5 mm				67108864 bit	1.7 V			e4			NOR TYPE		6 mm			1.8
KLM8G1GETF-B041	Samsung	FLASH CARD	OTHER					YES	1	CMOS				ASYNCHRONOUS			8589934592 words	1.8				8	GRID ARRAY						85 Cel		8GX8	8G	-25 Cel											.8 mm			11.5 mm				68719476736 bit		3.3V SUPPLY IS ALSO AVAILABLE							13 mm			1.8
MT25QL128ABA8ESF-0AAT	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA		3				8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.29 mm		SPI		134217728 bit	2.7 V						NOR TYPE	.00008 Amp	5.29 mm			3
MT29F8G08ABACAWP-IT:CTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3		NO		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			10	.5 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm				8589934592 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	18.4 mm			3.3	NO
SST26VF016B-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified	SPI		16777216 bit	2.7 V			e3	40	260	NOR TYPE	.000025 Amp	5.26 mm			3
MT25QL01GBBB8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3				1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V						NOR TYPE		8 mm			3
SST25VF020B-80-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words				3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified	SPI		2097152 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	4.9 mm
MX25L1606EM2I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			3/3.3	8	SMALL OUTLINE	SOP8,.3	1	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	86 MHz	5.23 mm	Not Qualified	SPI		16777216 bit	2.7 V			e3	30	260	NOR TYPE	.00002 Amp	5.28 mm			3
AT25SF081B-SSHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3				8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm		SPI		8388608 bit	2.7 V						NOR TYPE	.00003 Amp	4.925 mm			3
S29AL016J70TFI013	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
M25P128-VME6GB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3			3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	10000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified	SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	8 mm			2.7
W25Q64FVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words					8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm	Not Qualified	SPI		67108864 bit	3 V			e3	30	260		.00005 Amp	5.28 mm
S29GL01GS10DHI010	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3		YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S71WS256PC0HH3YR0	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32		Other Memory ICs		.8 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM			R-PBGA-B84		1.95 V	1.2 mm			8 mm	Not Qualified			268435456 bit	1.7 V								11.6 mm		80 ns	1.8
MT25QU02GCBB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		166 MHz	6 mm				2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
SST25VF080B-50-4I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words					1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm		SPI		8388608 bit	2.7 V			e3	40	260	NOR TYPE	.00003 Amp	5.275 mm
MTFC8GAMALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words					8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MX25L12833FM2I-10GTR	Macronix	FLASH																																																													3
W25Q32JVSNIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3.3				8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm				33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ			NOT SPECIFIED	NOT SPECIFIED			4.9 mm			3
MT29F16G08ABACAWP-AAT:C	Micron Technology	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3		NO		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			10	.5 mm	105 Cel	3-STATE	2GX8	2G	-40 Cel	4K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	80000 Write/Erase Cycles		12 mm				17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	3.3	NO
MT29F2G01ABAGDWB-IT:GTR	Micron Technology	FLASH																																																						30	260	SLC NAND TYPE					3.3
S29JL032J70TFI310	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
SST39SF040-70-4C-PHE	Microchip Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5		YES	5	8	IN-LINE	DIP32,.6		Flash Memories	100	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN		DUAL	1		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			4194304 bit	4.5 V			e3			NOR TYPE	.0001 Amp	41.91 mm		70 ns	5	YES
W25Q16JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3				8	SMALL OUTLINE					1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
M25P32-VME6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3			3/3.3	8	SMALL OUTLINE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	8 mm			2.7
MT25QU256ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8				1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.