HVSON FRAMs 41

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
FM25V02A-DGQ	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	32768 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	105 Cel	32KX8	32K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	10000000000000 Write/Erase Cycles	33 MHz	4 mm		SPI	262144 bit	2.7 V	2kv ESD available		30	260	.0005 Amp	4.5 mm
FM25V20A-DGQ	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		11	1.27 mm	105 Cel	256KX8	256K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	33 MHz	5 mm		SPI	2097152 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00025 Amp	6 mm
FM25V02A-DGQTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	32768 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	105 Cel	32KX8	32K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	10000000000000 Write/Erase Cycles		4 mm		SPI	262144 bit	2.7 V	2kv ESD available		30	260	.0005 Amp	4.5 mm
FM25V02A-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2,25		10	.95 mm	85 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	4 mm		SPI	262144 bit	2 V			30	260	.00015 Amp	4.5 mm
FM25V20A-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	ALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY AND 2KV ESD AVAILABLE	e3	30	260	.00025 Amp	6 mm
FM25V02A-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2,25		10	.95 mm	85 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	4 mm		SPI	262144 bit	2 V			30	260	.00015 Amp	4.5 mm
FM25V20A-DGQTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		11	1.27 mm	105 Cel	256KX8	256K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	33 MHz	5 mm		SPI	2097152 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00025 Amp	6 mm
FM25V20A-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	ALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY AND 2KV ESD AVAILABLE				.00025 Amp	6 mm
FM24CL64B-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.3 mA	8192 words	3.3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37	SRAMs	10	.95 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.65 V	.85 mm	100000000000000 Write/Erase Cycles	1 MHz	4 mm	Not Qualified	I2C	65536 bit	2.7 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE			260	.000006 Amp	4.5 mm
FM24CL64B-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.3 mA	8192 words	3.3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37	SRAMs	10	.95 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.65 V	.85 mm	100000000000000 Write/Erase Cycles	1 MHz	4 mm	Not Qualified	I2C	65536 bit	2.7 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE			260	.000006 Amp	4.5 mm
CY15B104Q-LHXIT	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	512KX8	512K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	4194304 bit	2 V	2kv ESD available			260	.00025 Amp	6 mm
FM25CL64B-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37	SRAMs	10	.95 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.65 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm	Not Qualified	SPI	65536 bit	2.7 V	2kv ESD available		30	260	.000006 Amp	4.5 mm
CY15B104Q-LHXI	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	512KX8	512K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	4194304 bit	2 V	2kv ESD available			260	.00025 Amp	6 mm
FM24CL16B-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.3 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.65 V	.85 mm	100000000000000 Write/Erase Cycles	1 MHz	4 mm		I2C	16384 bit	2.7 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE			260	.000006 Amp	4.5 mm
FM25CL64B-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37	SRAMs	10	.95 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.65 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm	Not Qualified	SPI	65536 bit	2.7 V	2kv ESD available		30	260	.000006 Amp	4.5 mm
FM24CL16B-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.3 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.65 V	.85 mm	100000000000000 Write/Erase Cycles	1 MHz	4 mm		I2C	16384 bit	2.7 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE			260	.000006 Amp	4.5 mm
MB85RC64TAPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.19 mA	8192 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE	R-PDSO-N8	3	3.6 V	.75 mm	10000000000000 Write/Erase Cycles	3.4 MHz	2 mm		I2C	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	e4			.00001 Amp	3 mm
FM25H20-DGTR	Cypress Semiconductor	FRAM	8	HVSON	RECTANGULAR		YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			260	.00027 Amp	6 mm
FM25H20-DG	Cypress Semiconductor	FRAM	8	HVSON	RECTANGULAR		YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00027 Amp	6 mm
FM25L16B-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm		SPI	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.000006 Amp	4.5 mm
MB85RC16PN-G-AMERE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.1 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		3.6 V	.8 mm	1000000000000 Write/Erase Cycles	1 MHz	2 mm		I2C	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000001 Amp	3 mm
MB85RS16NPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2.4 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	95 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8	3	3.6 V	.75 mm	10000000000 Write/Erase Cycles	20 MHz	2 mm		SPI	16384 bit	2.7 V	DATA RETENTION TIME @ 95 DEGREE CENTIGRADE				.00002 Amp	3 mm
CY15B102QN-50LHXI	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	1000000000000000 Write/Erase Cycles	50 MHz	5 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00007 Amp	6 mm
MB85RS64TPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	8192 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		3.6 V	.75 mm	10000000000000 Write/Erase Cycles	10 MHz	2 mm		SPI	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000012 Amp	3 mm
MB85RDP16LXPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.7 mA	2048 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	105 Cel	2KX8	2K	1.65 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		1.95 V	.75 mm	10000000000000 Write/Erase Cycles	15 MHz	2 mm		SPI	16384 bit	1.65 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.000011 Amp	3 mm
WM72016-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.025 mA	1024 words	2.5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25		20	.65 mm	85 Cel	1KX16	1K	2.1 V	-40 Cel		DUAL	HARDWARE	S-PDSO-N8	1	3 V	.65 mm	100000000000000 Write/Erase Cycles		3 mm			16384 bit	2.1 V	500KV ESD AVAILABLE					3 mm
WM71016-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		1024 words			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25		20	.65 mm	85 Cel	1KX16	1K		-40 Cel		DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles		3 mm			16384 bit		500KV ESD AVAILABLE					3 mm
WM71008-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		512 words			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25		20	.65 mm	85 Cel	512X16	512		-40 Cel		DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles		3 mm			8192 bit		500KV ESD AVAILABLE					3 mm
WM71004-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		256 words			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25		20	.65 mm	85 Cel	256X16	256		-40 Cel		DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles		3 mm			4096 bit		500KV ESD AVAILABLE					3 mm
FM25L16B-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm		SPI	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.000006 Amp	4.5 mm
FM25V10-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	128KX8	128K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	1048576 bit	2.7 V	ALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY AND 4KV ESD AVAILABLE				.00015 Amp	6 mm
FM25V10-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	128KX8	128K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	1048576 bit	2.7 V	ALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY AND 4KV ESD AVAILABLE				.00015 Amp	6 mm
CY15V102QN-50LHXIT	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.71 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.8 mm	1000000000000000 Write/Erase Cycles	50 MHz	5 mm		SPI	2097152 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.000065 Amp	6 mm
FM25L04B-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	512 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	512X8	512		-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm		SPI	4096 bit	2.7 V			30	260	.000006 Amp	4.5 mm
CY15B102QN-50LHXIT	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	1000000000000000 Write/Erase Cycles	50 MHz	5 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00007 Amp	6 mm
CY15V102QN-50LHXI	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.71 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.8 mm	1000000000000000 Write/Erase Cycles	50 MHz	5 mm		SPI	2097152 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.000065 Amp	6 mm
FM25L04B-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	512 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	512X8	512		-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm		SPI	4096 bit	2.7 V			30	260	.000006 Amp	4.5 mm
FM25V40-DGCTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	70 Cel	512KX8	512K	2.7 V	0 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	4194304 bit	2.7 V	also operates with 2minv supply @ 25 mhz				.00024 Amp	6 mm
FM25V40-DCG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	70 Cel	512KX8	512K	2.7 V	0 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	4194304 bit	2.7 V	also operates with 2minv supply @ 25 mhz				.00024 Amp	6 mm
FM25V20-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTIALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY; 4KV ESD AVAILABLE				.00025 Amp	6 mm
FM25V20-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTIALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY; 4KV ESD AVAILABLE				.00025 Amp	6 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.