SOP FRAMs 234

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
FM24W256-EG	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	2 mm	100000000000000 Write/Erase Cycles	1 MHz	5.23 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00003 Amp	5.28 mm
CY15B256J-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	262144 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.0005 Amp	4.889 mm
FM25V20-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	2097152 bit	2.7 V	DATA RETENTIALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY; 4KV ESD AVAILABLE				.00025 Amp	5.28 mm
MB85RS256APNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	25 MHz	3.9 mm	Not Qualified	SPI	262144 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
MB85RS256TYPNF-G-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	32KX8	32K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	262144 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		10	260	.00005 Amp	4.9 mm
MB85RS2MLYPNF-GS-AWE2	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	262144 words	1.8		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	125 Cel	256KX8	256K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		1.95 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.7 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.0002 Amp	4.9 mm
MB85RS2MTAPNF-G-AWE2	Sumitomo Electric Industries	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE, 1.7V TO 2.7V @ 33MHz				.00005 Amp	4.9 mm
MB85RS2MTAPNF-G-BDE1	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	2097152 bit	1.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
MB85RS2MTYPNF-G-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.00022 Amp	4.9 mm
MB85RS2MTYPNF-GS-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	125 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		10	260	.00022 Amp	4.9 mm
CY15B256Q-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		38	1.27 mm	125 Cel	32KX8	32K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	33 MHz	3.8985 mm		SPI	262144 bit	2.7 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.0005 Amp	4.889 mm
FM24V01-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	16KX8	16K	2 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	131072 bit	2 V	also operates with 1 MHZ ; 3.5KV ESD AVAILABLE	e3	30	260	.00015 Amp	4.889 mm
FM24V02-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	262144 bit	2 V	also operates with 1 MHZ ; 3.5KV ESD AVAILABLE	e4	20	260	.00015 Amp	4.889 mm
MB85R256FPF-G-BNDE1	Fujitsu	FRAM	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	3.3		8	SMALL OUTLINE	SOP28,.45		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL		R-PDSO-G28		3.6 V	2.8 mm	1000000000000 Write/Erase Cycles		8.6 mm			262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00005 Amp	17.75 mm	70 ns
MB85R256FPFCN-G-BNDE1	Fujitsu	FRAM	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	TSSOP28,.53,22	SRAMs	10	.55 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL		R-PDSO-G28		3.6 V	1.2 mm	1000000000000 Write/Erase Cycles		8 mm	Not Qualified		262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	11.8 mm	70 ns
MB85RC128APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.375 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	131072 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00002 Amp	5.05 mm
MB85RC64APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.375 mA	8192 words	3.3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	5.05 mm
MB85RC64VPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.13 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	5.05 mm
MB85RS128BPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	131072 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00005 Amp	5.05 mm
MB85RS64VPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	SPI	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00002 Amp	5.05 mm
CYPT15B102Q-GGMB	Infineon Technologies	FRAM	16	SOP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE	SOP16,.4		11	1.27 mm	125 Cel	256KX8	256K	2 V	-55 Cel		DUAL	HARDWARE/SOFTWARE	R-CDSO-G16	1	3.6 V	2.9 mm	10000000000000 Write/Erase Cycles	25 MHz	7.45 mm		SPI	2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.006 Amp	10.45 mm
FM1808-120-S	Infineon Technologies	FRAM	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	5		8	SMALL OUTLINE	SOP28,.4		10	1.27 mm	85 Cel	32KX8	32K	4.5 V	-40 Cel		DUAL		R-PDSO-G28		5.5 V	2.65 mm	10000000000 Write/Erase Cycles		7.5 mm			262144 bit	4.5 V					.00002 Amp	17.9 mm	120 ns
FM1808B-SGTR	Infineon Technologies	FRAM	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	4.5 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	100000000000000 Write/Erase Cycles		7.505 mm	Not Qualified		262144 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00005 Amp	17.905 mm	70 ns
5962R1821601VXC	Infineon Technologies	FRAM	16	SOP	RECTANGULAR	150k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE	SOP16,.4		11	1.27 mm	125 Cel	256KX8	256K	2 V	-55 Cel		DUAL	HARDWARE/SOFTWARE	R-CDSO-G16		3.6 V	2.9 mm	10000000000000 Write/Erase Cycles	25 MHz	7.45 mm		SPI	2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.006 Amp	10.45 mm
CY15B102Q-SXM	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		11	1.27 mm	125 Cel	256KX8	256K	2 V	-55 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	10000000000000 Write/Erase Cycles	25 MHz	5.23 mm		SPI	2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.00075 Amp	5.28 mm
CY15E064Q-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3.2 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	8KX8	8K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	16 MHz	3.8985 mm		SPI	65536 bit	4.5 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00003 Amp	4.889 mm
CY15B128J-SXA	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	131072 bit	2 V	2kv ESD available			260	.00015 Amp	4.889 mm
CY15B102QN-50SXIT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	1000000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00007 Amp	5.28 mm
CY15B102QM-50SWXIT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	1000000000000000 Write/Erase Cycles	50 MHz	3.8985 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.00007 Amp	4.889 mm
CY15E004J-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.45 mA	512 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	512X8	512	4.5 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm		I2C	4096 bit	4.5 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE			260	.00004 Amp	4.889 mm
CY15B128Q-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		38	1.27 mm	125 Cel	16KX8	16K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	33 MHz	3.8985 mm		SPI	131072 bit	2.7 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.0005 Amp	4.889 mm
FM25L16B-GA	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25		17	1.27 mm	125 Cel	2KX8	2K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000000000000 Write/Erase Cycles	15 MHz	3.9 mm		SPI	16384 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE	e4	30	260	.00002 Amp	4.9 mm
CY15B004J-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.34 mA	512 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	512X8	512	3 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm		I2C	4096 bit	3 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00002 Amp	4.889 mm
CY15E016J-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.45 mA	2048 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	2KX8	2K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm		I2C	16384 bit	4.5 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00004 Amp	4.889 mm
CY15E004Q-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3.2 mA	512 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	512X8	512	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	16 MHz	3.8985 mm		SPI	4096 bit	4.5 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00003 Amp	4.889 mm
CY15E064J-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.45 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	8KX8	8K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm		I2C	65536 bit	4.5 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00004 Amp	4.889 mm
FM25L16B-GATR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25		17	1.27 mm	125 Cel	2KX8	2K	3 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000000000000 Write/Erase Cycles	15 MHz	3.9 mm		SPI	16384 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE	e4			.00002 Amp	4.9 mm
FM24W64-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.3 mA	8192 words	3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	100000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.9 mm
CY15B004J-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.34 mA	512 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	512X8	512	3 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm		I2C	4096 bit	3 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.00002 Amp	4.889 mm
CY15V102QN-50SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	7 mA	262144 words	1.8		8	SMALL OUTLINE	SOP8,.3		11	1.27 mm	125 Cel	256KX8	256K	1.71 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.89 V	2.03 mm	10000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	2097152 bit	1.71 V	2kv ESD available			260	.00034 Amp	5.28 mm
CY15B256Q-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		38	1.27 mm	125 Cel	32KX8	32K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	33 MHz	3.8985 mm		SPI	262144 bit	2.7 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.0005 Amp	4.889 mm
CY15B128J-SXAT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	131072 bit	2 V	2kv ESD available			260	.00015 Amp	4.889 mm
FM25640C-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	4.5 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm		SPI	65536 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.9 mm
CY15V104QN-50SXAT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5.2 mA	524288 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available				.000075 Amp	5.28 mm
CY15V102QN-50SXI	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.7 mA	262144 words	1.8		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	1.71 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.89 V	2.03 mm	1000000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	2097152 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE				.000065 Amp	5.28 mm
FM24V01A-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	131072 bit	2 V	ALSO OPERATES 1 MHZ :2KV ESD AVAILABLE	e3	30	260	.00015 Amp	4.889 mm
FM25C160C-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words	5		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	2KX8	2K	4.5 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm		SPI	16384 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.9 mm
CY15B128Q-SXET	Infineon Technologies	FRAM	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		38	1.27 mm	125 Cel	16KX8	16K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	33 MHz	3.8985 mm		SPI	131072 bit	2.7 V	2kv ESD available				.0005 Amp	4.889 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.