TBGA FRAMs 20

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length
CY15V116QSN-108BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	27.5 mA	2097152 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	1.89 V	1.2 mm	100000000000000 Write/Erase Cycles	108 MHz	6 mm	SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE		260	.00042 Amp	8 mm
CY15B116QN-40BKXA	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	4.3 mA	2097152 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	2MX8	2M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE			.0002535 Amp	8 mm
CY15B116QN-40BKXQTR	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	8 mA	2097152 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	105 Cel	2MX8	2M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			.00095 Amp	8 mm
CY15B116QN-40BKXQ	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	8 mA	2097152 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	105 Cel	2MX8	2M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			.00095 Amp	8 mm
CY15V116QI-20BKXC	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.4 mA	2097152 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	70 Cel	2MX8	2M		0 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	20 MHz	6 mm	SPI	16777216 bit	1.71 V				.0001425 Amp	8 mm
CY15B116QSN-108BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	30 mA	2097152 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	2MX8	2M	1.8 V	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	108 MHz	6 mm	SPI	16777216 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE	e1	260	.00056 Amp	8 mm
CY15B116QI-20BKXC	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.4 mA	2097152 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	70 Cel	2MX8	2M		0 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	20 MHz	6 mm	SPI	16777216 bit	1.8 V				.0001425 Amp	8 mm
CY15V116QN-40BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3.6 mA	2097152 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	2MX8	2M	1.71 V	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE	e1	260	.0002525 Amp	8 mm
CY15B116QN-40BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	4.3 mA	2097152 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	2MX8	2M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE		260	.0002535 Amp	8 mm
CY15V116QN-40BKXQTR	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	7 mA	2097152 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	105 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			.0008 Amp	8 mm
CY15V116QN-40BKXQ	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	7 mA	2097152 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	105 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			.0008 Amp	8 mm
CY15B116QN-40BKXAT	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	4.3 mA	2097152 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	2MX8	2M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE			.0002535 Amp	8 mm
CY15V116QN-40BKXA	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	3.6 mA	2097152 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE			.0002525 Amp	8 mm
CY15V116QN-40BKXAT	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	3.6 mA	2097152 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	2MX8	2M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	40 MHz	6 mm	SPI	16777216 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 2KV ESD AVAILABLE			.0002525 Amp	8 mm
CY15V108QSN-108BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	27.5 mA	1048576 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	1MX8	1M		-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	100000000000000 Write/Erase Cycles	108 MHz	6 mm	SPI	8388608 bit	1.71 V				.000435 Amp	8 mm
CY15B108QSN-108BKXI	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	27.5 mA	1048576 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	10	1 mm	85 Cel	1MX8	1M		-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	108 MHz	6 mm	SPI	8388608 bit	1.8 V				.000435 Amp	8 mm
CY15B108QN-50BKXQT	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	8 mA	1048576 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	1 mm	105 Cel	1MX8	1M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.8 V	2kv ESD available			.000305 Amp	8 mm
CY15V108QN-50BKXQT	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	7.5 mA	1048576 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	1 mm	105 Cel	1MX8	1M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	100000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.71 V	2kv ESD available			.0003 Amp	8 mm
CY15V108QN-50BKXQ	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	7.5 mA	1048576 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	1 mm	105 Cel	1MX8	1M	1.71 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.89 V	1.2 mm	100000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.71 V	2kv ESD available			.0003 Amp	8 mm
CY15B108QN-50BKXQ	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	8 mA	1048576 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	1 mm	105 Cel	1MX8	1M	1.8 V	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.8 V	2kv ESD available			.000305 Amp	8 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.