TSOP1 FRAMs 9

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
FM28V100-TG	Infineon Technologies	FRAM	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.53,20	10	.5 mm	85 Cel	128KX8	128K	2 V	-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	8 mm	1048576 bit	2 V	2kv ESD available		260	.00015 Amp	11.8 mm	105 ns
FM28V100-TGTR	Infineon Technologies	FRAM	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.53,20	10	.5 mm	85 Cel	128KX8	128K	2 V	-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	8 mm	1048576 bit	2 V	2kv ESD available			.00015 Amp	11.8 mm	105 ns
MB85R1001ANC-GE1	Fujitsu	FRAM	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20	10	.5 mm	85 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G48		3.6 V	1.2 mm	10000000000 Write/Erase Cycles	12 mm	1048576 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE			.00005 Amp	12.4 mm
MB85R1001PFTN-GE1	Fujitsu	FRAM	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20	10	.5 mm	85 Cel	128KX8	128K		-40 Cel		DUAL	R-PDSO-G48		3.6 V	1.2 mm	10000000000 Write/Erase Cycles	12 mm	1048576 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE			.00005 Amp	12.4 mm
MB85R4002ANC-GE1	Fujitsu	FRAM	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20	10	.5 mm	85 Cel	256KX16	256K	3 V	-40 Cel		DUAL	R-PDSO-G48		3.6 V	1.2 mm	10000000000 Write/Erase Cycles	12 mm	4194304 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE			.00015 Amp	12.4 mm
FM28V020-TG	Infineon Technologies	FRAM	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	32768 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.53,20	10	.5 mm	85 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	8 mm	262144 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	40	260	.00015 Amp	11.8 mm	140 ns
FM28V020-TGTR	Infineon Technologies	FRAM	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	32768 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.53,20	10	.5 mm	85 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	8 mm	262144 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	40	260	.00015 Amp	11.8 mm	140 ns
FM28V020-T28G	Infineon Technologies	FRAM	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	32768 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	10	.55 mm	85 Cel	32KX8	32K	2 V	-40 Cel		DUAL	R-PDSO-G28		3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	8 mm	262144 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			.00015 Amp	11.8 mm	140 ns
FM28V020-T28GTR	Infineon Technologies	FRAM	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	32768 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	10	.55 mm	85 Cel	32KX8	32K	2 V	-40 Cel		DUAL	R-PDSO-G28	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	8 mm	262144 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			.00015 Amp	11.8 mm	140 ns

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.