TSOP2 FRAMs 22

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
FM22L16-55-TGTR	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	256KX16	256K	2.7 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		10.16 mm		4194304 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE;2.5KV ESD AVAILABLE;ALSO CONFIGURABLE AS 512KX8		30	260	.00027 Amp	18.41 mm	110 ns
FM22L16-55-TG	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	256KX16	256K	2.7 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		10.16 mm		4194304 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE;2.5KV ESD AVAILABLE;ALSO CONFIGURABLE AS 512KX8		30	260	.00027 Amp	18.41 mm	110 ns
CY15B102N-ZS60XA	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	12 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	33 MHz	10.16 mm		2097152 bit	2 V	2kv ESD available	e4		260	.00025 Amp	18.415 mm	70 ns
CY15B102N-ZS60XAT	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	12 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	33 MHz	10.16 mm		2097152 bit	2 V	2kv ESD available	e4		260	.00025 Amp	18.415 mm	70 ns
FM28V202A-TGTR	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD SILVER	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles		10.16 mm		2097152 bit	2 V	2kv ESD available	e4	30	260	.00025 Amp	18.415 mm	105 ns
FM21L16-60-TG	Cypress Semiconductor	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	10	.8 mm	85 Cel	128KX16	128K	2.7 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		10.16 mm	Not Qualified	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE;2.5KV ESD AVAILABLE;ALSO CONFIGURABLE AS 256KX8	e4	30	260	.00027 Amp	18.41 mm	110 ns
CY15B102N-ZS60XE	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	SOFTWARE	R-PDSO-G44	3	3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm		2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE	e4			.0007 Amp	18.415 mm	105 ns
CY15B102N-ZS60XET	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	SOFTWARE	R-PDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm		2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE	e4			.0007 Amp	18.415 mm	105 ns
CY15B102N-ZS60XM	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	128KX16	128K	2 V	-55 Cel		DUAL	SOFTWARE	R-XDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm		2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.0007 Amp	18.415 mm	60 ns
FM28V202-TGTR	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles		10.16 mm	Not Qualified	2097152 bit	2 V	4KV ESD AVAILABLE	e4	20	260	.00025 Amp	18.415 mm	105 ns
CY15B101N-ZS60XA	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	12 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	33 MHz	10.16 mm		1048576 bit	2 V	2kv ESD available	e4		260	.00025 Amp	18.415 mm	70 ns
FM28V102-TG	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	65536 words	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	10	.8 mm	85 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		10.16 mm	Not Qualified	1048576 bit	2 V	4KV ESD AVAILABLE	e4			.00025 Amp	18.415 mm	105 ns
CY15B101N-ZS60XAT	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	12 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	64KX16	64K	2 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	33 MHz	10.16 mm		1048576 bit	2 V	2kv ESD available			260	.00025 Amp	18.415 mm	70 ns
FM28V202A-TG	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD SILVER	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles		10.16 mm		2097152 bit	2 V	2kv ESD available	e4	30	260	.00025 Amp	18.415 mm	105 ns
FM28V202-TG	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles		10.16 mm	Not Qualified	2097152 bit	2 V	4KV ESD AVAILABLE	e4	20	260	.00025 Amp	18.415 mm	105 ns
FM28V102A-TGTR	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD SILVER	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles		10.16 mm		1048576 bit	2 V	2kv ESD available	e4			.00025 Amp	18.415 mm	105 ns
CY15B101N-ZS60XET	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm		1048576 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE	e4			.0007 Amp	18.415 mm	60 ns
FM28V102A-TG	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD SILVER	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles		10.16 mm		1048576 bit	2 V	2kv ESD available	e4			.00025 Amp	18.415 mm	105 ns
CY15B101N-ZS60XE	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm		1048576 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE	e4			.0007 Amp	18.415 mm	60 ns
CY15B101N-ZS60XMT	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	64KX16	64K	2 V	-55 Cel		DUAL		R-PDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm		1048576 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.0007 Amp	18.415 mm	60 ns
CY15B101N-ZS60XM	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	64KX16	64K	2 V	-55 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm		1048576 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.0007 Amp	18.415 mm	60 ns
CY15B102N-ZS60XMT	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		11	.8 mm	125 Cel	128KX16	128K	2 V	-55 Cel		DUAL	SOFTWARE	R-XDSO-G44		3.6 V	1.194 mm	10000000000000 Write/Erase Cycles		10.16 mm		2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.0007 Amp	18.415 mm	60 ns

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.