Cypress Semiconductor FRAMs 20

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
FM25CL64B-GA	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	11	1.27 mm	125 Cel	8KX8	8K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	16 MHz	3.8985 mm	Not Qualified	SPI	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 4KV ESD AVAILABLE	e4	20	260	.000006 Amp	4.889 mm
FM24CL64B-GA	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.34 mA	8192 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	125 Cel	8KX8	8K	3 V	-40 Cel	Tin (Sn)	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm	Not Qualified	I2C	65536 bit	3 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE; @85, 121 retention	e3	30	260	.00002 Amp	4.889 mm
FM25CL64B-GATR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	11	1.27 mm	125 Cel	8KX8	8K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	16 MHz	3.8985 mm	Not Qualified	SPI	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 4KV ESD AVAILABLE	e4	20	260	.000006 Amp	4.889 mm
FM24CL64B-GATR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.34 mA	8192 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	125 Cel	8KX8	8K	3 V	-40 Cel	Tin (Sn)	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm	Not Qualified	I2C	65536 bit	3 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE; @85, 121 retention	e3	30	260	.00002 Amp	4.889 mm
FM25V02-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	40 MHz	3.8985 mm	Not Qualified	SPI	262144 bit	2.7 V	also operates with 2minv supply @ 25 mhz and 1kv esd availabe	e3	40	260	.00015 Amp	4.889 mm
FM25V02-GTR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	40 MHz	3.8985 mm	Not Qualified	SPI	262144 bit	2.7 V	also operates with 2minv supply @ 25 mhz and 1kv esd availabe	e3	30	260	.00015 Amp	4.889 mm
FM25V01-GTR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	40 MHz	3.8985 mm	Not Qualified	SPI	131072 bit	2.7 V	also operates with 2minv supply @ 25 mhz and 1kv esd availabe	e4			.00015 Amp	4.889 mm
FM25H20-DGTR	Cypress Semiconductor	FRAM	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			260	.00027 Amp	6 mm
FM25H20-DG	Cypress Semiconductor	FRAM	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00027 Amp	6 mm
FM25V01-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	40 MHz	3.8985 mm	Not Qualified	SPI	131072 bit	2.7 V	also operates with 2minv supply @ 25 mhz and 1kv esd availabe	e4			.00015 Amp	4.889 mm
FM25H20-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00027 Amp	5.28 mm
FM25H20-GTR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00027 Amp	5.28 mm
FM21L16-60-TG	Cypress Semiconductor	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	10	.8 mm	85 Cel	128KX16	128K	2.7 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		10.16 mm	Not Qualified		2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE;2.5KV ESD AVAILABLE;ALSO CONFIGURABLE AS 256KX8	e4	30	260	.00027 Amp	18.41 mm	110 ns
FM25640B-GATR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1.2 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	8KX8	8K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	4 MHz	3.8985 mm	Not Qualified	SPI	65536 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 4KV ESD AVAILABLE	e4			.00003 Amp	4.889 mm
FM25C160B-GATR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	11	1.27 mm	125 Cel	2KX8	2K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	15 MHz	3.8985 mm	Not Qualified	SPI	16384 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 4KV ESD AVAILABLE	e4			.00003 Amp	4.889 mm
FM24W256-EGTR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	2 mm	100000000000000 Write/Erase Cycles	1 MHz	5.23 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00003 Amp	5.28 mm
FM24W256-EG	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	2 mm	100000000000000 Write/Erase Cycles	1 MHz	5.23 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00003 Amp	5.28 mm
FM21LD16-60-BG	Cypress Semiconductor	FRAM	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	10	.75 mm	85 Cel	128KX16	128K	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		6 mm	Not Qualified		2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE;2.5KV ESD AVAILABLE;ALSO CONFIGURABLE AS 256KX8	e1		260	.00027 Amp	8 mm	110 ns
FM24V01-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	16KX8	16K	2 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	131072 bit	2 V	also operates with 1 MHZ ; 3.5KV ESD AVAILABLE	e3	30	260	.00015 Amp	4.889 mm
FM24V02-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	262144 bit	2 V	also operates with 1 MHZ ; 3.5KV ESD AVAILABLE	e4	20	260	.00015 Amp	4.889 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.