MASK ROM MASK ROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM23V128005TY-12	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8388608 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		8MX16	8M	0 Cel		DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	134217728 bit	2.7 V						16.4 mm	120 ns
KM23C4000A-12	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	120 ns
KM23C4100BFP-15	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-PQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	14 mm	150 ns
K3N5V1000E-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0			.00003 Amp	52.42 mm	120 ns
KM23257SP-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words			8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit			e0					200 ns
K3P5C1000F-TC120	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V			30	240		18.41 mm	120 ns
K3P7U1000B-GC	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			50 mA	4194304 words	3	3	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44					Not Qualified	67108864 bit			e0			.00005 Amp		120 ns
K3N7V1000C-GC12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	3.3	3.3	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	3 V		e0			.00003 Amp	28.5 mm	120 ns
KM23256P-25	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit			e0					250 ns
K3N7C4000B-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	4194304 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	67108864 bit	4.5 V		e0			.07 Amp	52.42 mm	120 ns
KM23C16000CET-12	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel		2MX8	2M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e0			.00005 Amp	18.41 mm	120 ns
K3P6V2000B-SC10	Samsung	MASK ROM	COMMERCIAL	70	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, SHRINK PITCH	SOP70,.63,32	16	MASK ROMs	.8 mm	70 Cel		1MX32	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G70		3.6 V	3.1 mm	12.7 mm	Not Qualified	33554432 bit	3 V	ALSO CONFIGURABLE AS 1M X 32	e0			.00003 Amp	28.57 mm	100 ns
K3N5C1000E-GC150	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	16777216 bit	4.5 V						28.5 mm	150 ns
K3N4C1000E-DC15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	524288 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	3				Not Qualified	8388608 bit			e0			.00005 Amp		150 ns
K3N6C1000F-GC100	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V			30	225		28.5 mm	100 ns
K3N6C1000F-TC15	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	18.41 mm	150 ns
KM23V4000BG-20	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3.3	3/3.3	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	2.7 V		e0			.00005 Amp	20.47 mm	200 ns
K3N7C1000C-YC150	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G48		5.5 V	1.2 mm	12 mm	Not Qualified	67108864 bit	4.5 V			30	240		16.4 mm	150 ns
K3N4U1000D-GC120	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDSO-G44		3.3 V	3.1 mm	12.6 mm	Not Qualified	8388608 bit	2.7 V			30	225		28.5 mm	120 ns
K3P4U1000E-GC12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	3	3	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	3.1 mm	12.6 mm	Not Qualified	8388608 bit	2.7 V		e0			.00003 Amp	28.5 mm	120 ns
K3N5V1000D-TC10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	ALSO CONFIGURABLE AS 1M X 16	e0			.00003 Amp	18.41 mm	100 ns
KM2364SP-25	Samsung	MASK ROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP24,.6		MASK ROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	3				Not Qualified	65536 bit			e0					250 ns
KM2365SPI-25	Samsung	MASK ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	65536 bit			e0					250 ns
KM23C16101A-20	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T36		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0			.06 Amp	45.72 mm	200 ns
KM23V4100DT	Samsung	MASK ROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	SMALL OUTLINE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	18.41 mm	120 ns
KM23V8105D-10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	3.3		16	IN-LINE		8		2.54 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	3 V	TTL COMPATIBLE I/O					52.42 mm	100 ns
KM23V4100D-12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	3	3	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.3 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16	e0			.00003 Amp	52.42 mm	120 ns
K3N6C4000E-DC15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	52.42 mm	150 ns
K3N7U1000B-YC	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	67108864 bit	2.7 V			30	240		16.4 mm	120 ns
KM23V8100DT	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V	USER CONFIGURABLE AS 512K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	18.41 mm	120 ns
K3P7C1000B-TC150	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	4.5 V			30	240		18.41 mm	150 ns
KM2365J-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			60 mA	8192 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	65536 bit			e0					250 ns
K3N6C3000C-DC10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	5	5	8	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		4MX8	4M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	52.42 mm	100 ns
K3N5V1000D-TC100	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V			30	240		18.41 mm	100 ns
KM23V64000B	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	4194304 words		3/3.3	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42					Not Qualified	67108864 bit			e0			.04 Amp		120 ns
KM2364SPI-25	Samsung	MASK ROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP24,.6		MASK ROMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T24	3				Not Qualified	65536 bit			e0					250 ns
K3N6C1000E-GC150	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V			30	225		28.5 mm	150 ns
K3P6V1000D-YE	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-20 Cel		DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	33554432 bit	3 V						16.4 mm	100 ns
KM23C32000FP-20	Samsung	MASK ROM	COMMERCIAL	64	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	5	5	8	FLATPACK	QFP64,.7X.95,40	16	MASK ROMs	1 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	TIN LEAD	QUAD	R-PQFP-G64		5.5 V	2.75 mm	14 mm	Not Qualified	33554432 bit	4.5 V		e0			.0001 Amp	20 mm	200 ns
KM23C2000AG-10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e0			.00005 Amp	20.47 mm	100 ns
KM23C8000G-25	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	20.47 mm	250 ns
K3N3C1000D-DC10	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	52.42 mm	100 ns
KM23S32000DETY	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	85 Cel		4MX8	4M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G48		2.7 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.3 V	CONFIGURABLE AS 2M X 16	e0			.000005 Amp	16.4 mm	150 ns
K3P4V1000E-GC10	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	3.3	3.3	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	8388608 bit	3 V		e0			.00003 Amp	28.5 mm	100 ns
K3P5V1000D-DC10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0			.00003 Amp	52.42 mm	100 ns
K3N3V3000D-GC	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			25 mA	524288 words	3.3	3.3	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel		512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	4194304 bit			e0			.00003 Amp		100 ns
K3N3C1000D-GC100	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDSO-G40		5.5 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	4.5 V			30	225		25.65 mm	100 ns
KM23C8105DT-10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	18.41 mm	100 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.