24 MASK ROM 52
| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Samsung |
MASK ROM |
INDUSTRIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
60 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
MASK ROMs |
2.54 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T24 |
3 |
Not Qualified |
65536 bit |
e0 |
300 ns |
||||||||||||||||||
|
Samsung |
MASK ROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
60 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
MASK ROMs |
2.54 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T24 |
3 |
Not Qualified |
65536 bit |
e0 |
200 ns |
||||||||||||||||||
|
Samsung |
MASK ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
60 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
MASK ROMs |
2.54 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
DUAL |
R-XDIP-T24 |
3 |
Not Qualified |
65536 bit |
e0 |
250 ns |
||||||||||||||||||
|
Samsung |
MASK ROM |
INDUSTRIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
60 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
MASK ROMs |
2.54 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T24 |
3 |
Not Qualified |
65536 bit |
e0 |
200 ns |
Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.
Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.
Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.
One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.