36 MASK ROM 26

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM23V16100A-20	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	e0	.00005 Amp	45.72 mm	200 ns
KM23V16101A-25	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	e0	.03 Amp	45.72 mm	250 ns
KM23C32101C-10	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		4MX8	4M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V	e0	.05 Amp	45.72 mm	100 ns
KM23C16100A-15	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0	.00005 Amp	45.72 mm	150 ns
KM23C32101A-15	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	4194304 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		4MX8	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T36				Not Qualified	33554432 bit		e0	.06 Amp		150 ns
KM23C16101B-15	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		2MX8	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T36				Not Qualified	16777216 bit		e0	.06 Amp		150 ns
KM23V16100A-25	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	e0	.00005 Amp	45.72 mm	250 ns
KM23C16100A-20	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0	.00005 Amp	45.72 mm	200 ns
KM23C32101A-12	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	4194304 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		4MX8	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T36				Not Qualified	33554432 bit		e0	.06 Amp		120 ns
KM23C32101C-12	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		4MX8	4M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V	e0	.05 Amp	45.72 mm	120 ns
KM23C16101C-10	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V			45.72 mm	100 ns
KM23C16100A-12	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0	.00005 Amp	45.72 mm	120 ns
KM23V16101A-30	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	e0	.03 Amp	45.72 mm	300 ns
KM23C16101A-20	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0	.06 Amp	45.72 mm	200 ns
KM23C16101B-12	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		2MX8	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T36				Not Qualified	16777216 bit		e0	.06 Amp		120 ns
KM23C16101B-20	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		2MX8	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T36				Not Qualified	16777216 bit		e0	.06 Amp		200 ns
KM23C16101A-15	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0	.06 Amp	45.72 mm	150 ns
KM23V16100A-35	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	3/3.3	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	e0	.00005 Amp	45.72 mm	350 ns
KM23C16101A-12	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0	.06 Amp	45.72 mm	120 ns
KM23C16101C-12	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V			45.72 mm	120 ns
KM23C32101C-15	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		4MX8	4M	TIN LEAD	DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V	e0	.05 Amp	45.72 mm	150 ns
KM23C32101A-20	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	4194304 words	5	5	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel		4MX8	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T36				Not Qualified	33554432 bit		e0	.06 Amp		200 ns
KM23V16101A-35	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	3/3.3	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	e0	.03 Amp	45.72 mm	350 ns
KM23V16100A-30	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	e0	.00005 Amp	45.72 mm	300 ns
KM23V16101A-20	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP36,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36	3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	e0	.03 Amp	45.72 mm	200 ns
KM23C16101C-15	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		DUAL	R-PDIP-T36	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V			45.72 mm	150 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.