42 MASK ROM 285

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
LC3101(DIP42S)	Onsemi	MASK ROM	OTHER	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			2 mA		5	5		IN-LINE, SHRINK PITCH	SDIP42,.6		MASK ROMs	1.78 mm	70 Cel				-30 Cel		DUAL	R-PDIP-T42				Not Qualified	131072 bit								25600 ns
LC3101(DIP42)	Onsemi	MASK ROM	OTHER	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			2 mA		5	5		IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel				-30 Cel		DUAL	R-PDIP-T42				Not Qualified	131072 bit								25600 ns
TC5332201AP	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4194304 words	5		8	IN-LINE				2.54 mm	70 Cel		4MX8	4M	-10 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V	TTL COMPATIBLE I/O	e0				53.2 mm	120 ns
TC538200P	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.0001 Amp	53.2 mm	200 ns
TC5316200CP	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0				53.2 mm	120 ns
TC5316200AP	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0				53.2 mm	150 ns
TC5316210BP	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0				53.2 mm	150 ns
TC5316200P	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0			.0001 Amp	53.2 mm	200 ns
TC5316200BP	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0				53.2 mm	200 ns
TC5316200AP-15	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	1048576 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0			.0001 Amp		150 ns
TC5332202AP	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	IN-LINE				2.54 mm	70 Cel		2MX16	2M	-10 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V	TTL COMPATIBLE I/O	e0				53.2 mm	120 ns
TC5316210CP	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0				53.2 mm	120 ns
TC538200AP	Toshiba	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	4.8 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0				53.2 mm	150 ns
HN624116P-25L	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3.5 V						52.8 mm	250 ns
HN62438NP-15	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	150 ns
HN624316PN-12	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V						52.8 mm	120 ns
UPD23C16000LWCZ	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	1048576 words		3/3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0			.00002 Amp		200 ns
UPD23C8000XCZ-XXX	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	524288 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	8388608 bit			e0			.0001 Amp		120 ns
HN62438PN-15	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	150 ns
UPD23C8000CZ	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	524288 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	8388608 bit			e0			.0001 Amp		250 ns
UPD23C8000LXCZ-XXX	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	524288 words		3/3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	8388608 bit			e0			.00002 Amp		200 ns
HN62418P-15	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	150 ns
UPD23C16000LCZ-XXX	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			35 mA	1048576 words		3/3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0			.00003 Amp		140 ns
HN62428P-20	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	200 ns
HN624017P-17	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V						52.8 mm	170 ns
UPD23C8000LCZ-XXX	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			35 mA	524288 words		3/3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	8388608 bit			e0			.00003 Amp		140 ns
UPD23C16000CZ	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	1048576 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0			.0001 Amp		250 ns
UPD23C24020CZ-XXX	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	1572864 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		1.5MX16	1.5M	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	25165824 bit			e0			.0001 Amp		120 ns
HN624116P-15	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V						52.8 mm	150 ns
HN62438NP-12	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	120 ns
HN624032P-15	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4194304 words	5		8	IN-LINE		16		2.54 mm	70 Cel		4MX8	4M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V						52.8 mm	150 ns
UPD23C64020CZ-XXX	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	4194304 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		4MX16	4M	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	67108864 bit			e0					120 ns
HN62W428P	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE				2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	3 V						52.8 mm	300 ns
HN624116P-30L	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V						52.8 mm	300 ns
HN62438PN-12	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	120 ns
HN62428P	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	200 ns
HN624032P-20	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4194304 words	5		8	IN-LINE		16		2.54 mm	70 Cel		4MX8	4M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V						52.8 mm	200 ns
UPD23C16000WCZ-XXX	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	1048576 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0			.0001 Amp		120 ns
HN62W4116P	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V						52.8 mm	300 ns
HN624316PN-15	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V						52.8 mm	150 ns
HN62438P-10	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	100 ns
HN62428P-15	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	150 ns
HN62438P-12	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE		16		2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V						52.8 mm	120 ns
HN624116P-20	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE		16		2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V						52.8 mm	200 ns
HN624416NP-10	Renesas Electronics	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE				2.54 mm	70 Cel		2MX8	2M	0 Cel		DUAL	R-PDIP-T42	5.5 V	5.06 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16					52.8 mm	100 ns
K3N5V1000F-DC120	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42	3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	120 ns
K3N7C4000M-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	4194304 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	67108864 bit	4.5 V		e0				52.42 mm	120 ns
K3N5U1000D-DC150	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42	3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	150 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.