86 MASK ROM 18

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
UPD23C32202LG5-XXX-9JH	Renesas Electronics	MASK ROM	COMMERCIAL	86	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			150 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	1MX32	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86				Not Qualified	33554432 bit			e0	.0001 Amp		15 ns
UPD23C64202LG5-XXX-9JH	Renesas Electronics	MASK ROM	COMMERCIAL	86	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			200 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86				Not Qualified	67108864 bit			e0	.0001 Amp		6 ns
K3S6V2000M-TC15	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	150 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	1MX32	1M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V		e0	.00015 Amp	22.22 mm	10 ns
K3S6V2000M-TC20	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	150 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	1MX32	1M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V		e0	.00015 Amp	22.22 mm	10 ns
K3S7V2000M-TC12	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.00015 Amp	22.22 mm	6 ns
K3S7V2000M-TC30	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.00015 Amp	22.22 mm	6 ns
KM23SV64205T-30	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CONFIGURABLE AS 4M X 16	e0	.00015 Amp	22.22 mm	6 ns
KM23SV64205T-12	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CONFIGURABLE AS 4M X 16	e0	.00015 Amp	22.22 mm	6 ns
K3S7V2000M-TC10	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.00015 Amp	22.22 mm	6 ns
KM23SV64205T-15	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CONFIGURABLE AS 4M X 16	e0	.00015 Amp	22.22 mm	6 ns
KM23SV32205T-20	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	150 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	1MX32	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	CONFIGURABLE AS 1M X 32	e0	.00015 Amp	22.22 mm	10 ns
KM23SV32205T-30	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	150 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	1MX32	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	CONFIGURABLE AS 1M X 32	e0	.00015 Amp	22.22 mm	10 ns
K3S7V2000M-TC20	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.00015 Amp	22.22 mm	6 ns
KM23SV64205T-20	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CONFIGURABLE AS 4M X 16	e0	.00015 Amp	22.22 mm	6 ns
K3S6V2000M-TC30	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	150 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	1MX32	1M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V		e0	.00015 Amp	22.22 mm	10 ns
K3S7V2000M-TC15	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.00015 Amp	22.22 mm	6 ns
KM23SV64205T-10	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	100 mA	2097152 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	2MX32	2M	TIN LEAD	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CONFIGURABLE AS 4M X 16	e0	.00015 Amp	22.22 mm	6 ns
KM23SV32205T-15	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	150 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	1MX32	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	CONFIGURABLE AS 1M X 32	e0	.00015 Amp	22.22 mm	10 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.