TFBGA MASK ROM 21

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
UPD23C64380F9-XXX-BC3	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	ASYNCHRONOUS	75 mA	4194304 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	4MX16	4M	-10 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	67108864 bit	2.7 V		e0			.00003 Amp	8 mm	120 ns
UPD23C32340F9-XXX-BC3	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	2MX16	2M	-10 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e0			.00003 Amp	8 mm	100 ns
UPD23C32380F9-XXX-BC3	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	2097152 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	2MX16	2M	-10 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e0			.00003 Amp	8 mm	100 ns
UPD23C32300F9-XXX-BC3-A	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	2MX16	2M	-10 Cel	MATTE TIN/TIN BISMUTH	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e3/e6			.00003 Amp	8 mm	100 ns
UPD23C32380F9-XXX-BC3-A	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	2097152 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	2MX16	2M	-10 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e1			.00003 Amp	8 mm	100 ns
UPD23C64300F9-XXX-BC3	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	4194304 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	4MX16	4M	-10 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	67108864 bit	2.7 V		e0			.00003 Amp	8 mm	120 ns
UPD23C64300F9-XXX-BC3-A	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	4194304 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	4MX16	4M	-10 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	67108864 bit	2.7 V		e1			.00003 Amp	8 mm	120 ns
UPD23C64340F9-XXX-BC3	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	4194304 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	4MX16	4M	-10 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	67108864 bit	2.7 V		e0			.00003 Amp	8 mm	120 ns
UPD23C64340F9-XXX-BC3-A	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	4194304 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	4MX16	4M	-10 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	67108864 bit	2.7 V		e1			.00003 Amp	8 mm	120 ns
UPD23C64380F9-XXX-BC3-A	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	ASYNCHRONOUS	75 mA	4194304 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	4MX16	4M	-10 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	67108864 bit	2.7 V		e1			.00003 Amp	8 mm	120 ns
UPD23C32300F9-XXX-BC3	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	2MX16	2M	-10 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e0			.00003 Amp	8 mm	100 ns
UPD23C32340F9-XXX-BC3-A	Renesas Electronics	MASK ROM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	MASK ROMs	.8 mm	70 Cel	2MX16	2M	-10 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B48	3.6 V	1.07 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e1			.00003 Amp	8 mm	100 ns
K3P7V1000B-FC100	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.75 mm	70 Cel	4MX16	4M	0 Cel		BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	67108864 bit	3 V			30	240		9 mm	100 ns
KM23V64005BF-12	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.75 mm	70 Cel	4MX16	4M	0 Cel		BOTTOM	S-PBGA-B48	3.3 V	1.2 mm	9 mm	Not Qualified	67108864 bit	2.7 V						9 mm	120 ns
KM23V64015BF-10	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	3	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	MASK ROMs	.75 mm	70 Cel	4MX16	4M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48	3.3 V	1.2 mm	9 mm	Not Qualified	67108864 bit	2.7 V	CAN ALSO BE OPERATED IN 3V TO 3.6V	e0			.00003 Amp	9 mm	100 ns
K3P7Q1000B-FC10	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	3	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	MASK ROMs	.75 mm	70 Cel	4MX16	4M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48	3.3 V	1.2 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 4M X 16	e0			.00005 Amp	9 mm	100 ns
K3P7P1000B-FC10	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	MASK ROMs	.75 mm	70 Cel	4MX16	4M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	67108864 bit	3 V	ALSO CONFIGURABLE AS 4M X 16	e0			.00005 Amp	9 mm	100 ns
K3P7U1000B-FC12	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	MASK ROMs	.75 mm	70 Cel	4MX16	4M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48	3.3 V	1.2 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 4M X 16	e0			.00005 Amp	9 mm	120 ns
K3P7V1000B-FC10	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	MASK ROMs	.75 mm	70 Cel	4MX16	4M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	67108864 bit	3 V	ALSO CONFIGURABLE AS 4M X 16	e0			.00005 Amp	9 mm	100 ns
K3P7U1000B-FC120	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.75 mm	70 Cel	4MX16	4M	0 Cel		BOTTOM	S-PBGA-B48	3.3 V	1.2 mm	9 mm	Not Qualified	67108864 bit	2.7 V			30	240		9 mm	120 ns
KM23V64005BF-10	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.75 mm	70 Cel	4MX16	4M	0 Cel		BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	67108864 bit	3 V						9 mm	100 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.