TSOP1 MASK ROM 198

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K3N6S1000D-YC	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	2.5		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel	2MX16	2M	0 Cel		DUAL	R-PDSO-G48	2.7 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.3 V						16.4 mm	150 ns
KM23C4000DETY	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	4194304 bit	4.5 V						18.4 mm	80 ns
KM23S32005BETY	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	85 Cel	4MX8	4M	-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G48	2.7 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.3 V	CONFIGURABLE AS 2M X 16	e0			.000005 Amp	16.4 mm	150 ns
K3P7V1000B-YC120	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel	4MX16	4M	0 Cel		DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	67108864 bit	3 V			30	240		16.4 mm	120 ns
K3N3U3000D-AE95	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		MASK ROMs	.5 mm	85 Cel	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32	3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V	TTL COMPATIBLE I/O	e0			.00003 Amp	11.8 mm	95 ns
K3N3V3000D-AE85	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		MASK ROMs	.5 mm	85 Cel	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	11.8 mm	85 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.