TSOP2 MASK ROM 390

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K3N3C1000D-TE080	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel	256KX16	256K	-20 Cel		DUAL	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V			30	240		18.41 mm	80 ns
KM23SV32205T-15	Samsung	MASK ROM	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	150 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	16	MASK ROMs	.5 mm	70 Cel	1MX32	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86	3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	CONFIGURABLE AS 1M X 32	e0			.00015 Amp	22.22 mm	10 ns
K3N6U1000E-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44	3.3 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V		e0			.00003 Amp	18.41 mm	120 ns
K3N3C1000D-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	18.41 mm	120 ns
KM23C16005DT-10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel	1MX16	1M	0 Cel		DUAL	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16					18.41 mm	100 ns
K3P6V1000B-TE150	Samsung	MASK ROM		44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm		2MX16	2M			DUAL	R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V			30	240		18.41 mm	150 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.