SQUARE MASK ROM 172

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM23128SJ-15	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	16384 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		16KX8	16K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	131072 bit			e0					150 ns
KM23128SJI-25	Samsung	MASK ROM	INDUSTRIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	16384 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	131072 bit			e0					250 ns
KM23C4100HFP1-15	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	14 mm	150 ns
KM23C4100BFP-12	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-PQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	14 mm	120 ns
KM23128J-15	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	16384 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		16KX8	16K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	131072 bit			e0					150 ns
KM23256J-20	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					200 ns
K3P7V1000B-FC10	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	MASK ROMs	.75 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48		3.6 V	1.2 mm	9 mm	Not Qualified	67108864 bit	3 V	ALSO CONFIGURABLE AS 4M X 16	e0			.00005 Amp	9 mm	100 ns
KM23C4100HFP1-10	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	14 mm	100 ns
KM2365SJ-30	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			60 mA	8192 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	65536 bit			e0					300 ns
KM23257J-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words			8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					250 ns
KM23C4100FP1-25	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	14 mm	250 ns
KM23C4100HFP1-12	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	14 mm	120 ns
KM23C4200BJ-12	Samsung	MASK ROM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	CHIP CARRIER	LDCC44,.7SQ	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-PQCC-J44		5.5 V	4.57 mm	16.5862 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	16.5862 mm	120 ns
K3P7U1000B-FC120	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.75 mm	70 Cel		4MX16	4M	0 Cel		BOTTOM	S-PBGA-B48		3.3 V	1.2 mm	9 mm	Not Qualified	67108864 bit	2.7 V			30	240		9 mm	120 ns
KM23256SJ-15	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					150 ns
KM23128J-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	16384 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		16KX8	16K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	131072 bit			e0					250 ns
KM23257SJ-15	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words			8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					150 ns
KM23V64005BF-10	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.75 mm	70 Cel		4MX16	4M	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.2 mm	9 mm	Not Qualified	67108864 bit	3 V						9 mm	100 ns
KM23256J-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					250 ns
KM23257JI-15	Samsung	MASK ROM	INDUSTRIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words			8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					150 ns
KM23257SJ-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words			8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					250 ns
KM23C8100HFP1-15	Samsung	MASK ROM	COMMERCIAL	44	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	FLATPACK	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	QUAD	S-PQFP-G44		5.5 V		14 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	14 mm	150 ns
KM23C4100FP3-20	Samsung	MASK ROM	COMMERCIAL	44	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	262144 words	5	5	16	FLATPACK	QFP44,.7SQ,32	8	MASK ROMs	.8 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	QUAD	S-PQFP-G44	3				Not Qualified	4194304 bit			e0			.0001 Amp		200 ns
KM23C4100BFP1-15	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	14 mm	150 ns
KM23256SJI-15	Samsung	MASK ROM	INDUSTRIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					150 ns
KM23C4100FP1-15	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	14 mm	150 ns
KM23C4100FP2-25	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	FLATPACK, WINDOW	TQFP44,.6SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V		10 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	10 mm	250 ns
KM23C4100AFP1-20	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	14 mm	200 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.