COMMERCIAL MASK ROM 2,356

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K3N5V1000D-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		1MX16	1M	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	ALSO CONFIGURABLE AS 1M X 16	e0			.00003 Amp	18.41 mm	120 ns
KM23C8100HFP1-15	Samsung	MASK ROM	COMMERCIAL	44	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	FLATPACK	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	1MX8	1M	TIN LEAD	QUAD	S-PQFP-G44		5.5 V		14 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	14 mm	150 ns
KM23V64000T-12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8388608 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CONFIGURABLE AS 4M X 16					18.41 mm	120 ns
K3N4V1000E-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	3 V		e0			.00003 Amp	52.42 mm	120 ns
KM23V8000DG-10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		1MX8	1M		DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	8388608 bit	3 V						20.47 mm	100 ns
K3N3U1000D-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		256KX16	256K	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00003 Amp	18.41 mm	120 ns
KM2365P-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel		8KX8	8K	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	65536 bit			e0					200 ns
K3N6C1000C-GC100	Samsung	MASK ROM	COMMERCIAL	44	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		2MX16	2M		DUAL	R-PDSO-N44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V			30	225		28.5 mm	100 ns
K3N6C1000C-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		2MX16	2M	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	18.41 mm	120 ns
KM23C8105DT-15	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		512KX16	512K	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	18.41 mm	150 ns
KM23C8100FP2-20	Samsung	MASK ROM	COMMERCIAL	64	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	FLATPACK	QFP64,.7X.95,40	16	MASK ROMs	1 mm	70 Cel	3-STATE	1MX8	1M	TIN LEAD	QUAD	R-PQFP-G64		5.5 V	2.75 mm	14 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	20 mm	200 ns
K3P5U1000D-GC12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	3	3	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		1MX16	1M	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	3.1 mm	12.6 mm	Not Qualified	16777216 bit	2.7 V		e0			.00003 Amp	28.5 mm	120 ns
KM23C32100FP-20	Samsung	MASK ROM	COMMERCIAL	64	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	4194304 words	5	5	8	FLATPACK	QFP64,.7X.95,40	16	MASK ROMs	1 mm	70 Cel	3-STATE	4MX8	4M	TIN LEAD	QUAD	R-PQFP-G64		5.5 V	2.75 mm	14 mm	Not Qualified	33554432 bit	4.5 V		e0			.0001 Amp	20 mm	200 ns
K3N6U1000E-YC120	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		2MX16	2M		DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.7 V			30	240		16.4 mm	120 ns
K3N4U3000D-GC12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	3	3	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel		1MX8	1M	TIN LEAD	DUAL	R-PDSO-G32		3.3 V	3 mm	11.43 mm	Not Qualified	8388608 bit	2.7 V	TTL COMPATIBLE I/O	e0			.00003 Amp	20.47 mm	120 ns
KM23C32005G-25	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	4194304 words	5	5	8	SMALL OUTLINE	SOP44,.63	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	4MX8	4M	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	28.5 mm	250 ns
KM23C64000BTY-12	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	4194304 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	70 Cel		4MX16	4M	TIN LEAD	DUAL	R-PDSO-G48		5.5 V	1.2 mm	12 mm	Not Qualified	67108864 bit	4.5 V	CONFIGURABLE AS 4M X 16	e0			.0001 Amp	16.4 mm	120 ns
K3N5U1000E-DC120	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M		DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	120 ns
KM23256P-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel		32KX8	32K	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit			e0					200 ns
K3P7U1000A-YC100	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		4MX16	4M		DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	67108864 bit	3 V			30	240		16.4 mm	100 ns
K3N5V1000D-DC10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M		DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V	CONFIGURABLE AS 1M X 16					52.42 mm	100 ns
KM23C32000A-20	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL		60 mA	2097152 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		2MX16	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	52.25 mm	200 ns
K3P4V1000D-DC10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	3 V	CONFIGURABLE AS 512K X 16	e0			.00003 Amp	52.42 mm	100 ns
K3N6C1000C-GC10	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		2MX16	2M	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V	ALSO CONFIGURABLE AS 2M X 16	e0			.00005 Amp	28.5 mm	100 ns
KM23C8100CG-12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			60 mA	524288 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		512KX16	512K	TIN LEAD	DUAL	R-PDSO-G44	3				Not Qualified	8388608 bit			e0			.00005 Amp		120 ns
KM23V8001B-25	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3.3	3/3.3	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	TIN LEAD	DUAL	R-PDIP-T32		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e0			.03 Amp	41.91 mm	250 ns
K3N6V1000E-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		2MX16	2M	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V		e0			.00003 Amp	18.41 mm	120 ns
K3N4C1000E-GC15	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			50 mA	524288 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		512KX16	512K	TIN LEAD	DUAL	R-PDSO-G44	3				Not Qualified	8388608 bit			e0			.00005 Amp		150 ns
K3N6C1000C-TC10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		2MX16	2M	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V	ALSO CONFIGURABLE AS 2M X 16	e0			.00005 Amp	18.41 mm	100 ns
K3P6U1000F-TC120	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		2MX16	2M		DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V			30	240		18.41 mm	120 ns
KM23C2100H-10	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.00005 Amp	52.43 mm	100 ns
KM23C8100D	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE				2.54 mm	70 Cel		1MX8	1M		DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	USER CONFIGURABLE AS 512K X 16					52.42 mm	100 ns
KM23V4100C	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	262144 words		3/3.3	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40					Not Qualified	4194304 bit			e0			.00003 Amp		150 ns
K3N5C1000F-GC12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		1MX16	1M	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	16777216 bit	4.5 V		e0			.00005 Amp	28.5 mm	120 ns
K3N4C1000E-TC10	Samsung	MASK ROM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			50 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		512KX16	512K	TIN LEAD	DUAL	R-PDSO-G44	3				Not Qualified	8388608 bit			e0			.00005 Amp		100 ns
K3P5C1000D-TC150	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		16 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		16X16	16		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	256 bit	4.5 V			30	240		18.41 mm	150 ns
KM23C2001A-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.04 Amp	41.91 mm	100 ns
KM23V32205BSG-10	Samsung	MASK ROM	COMMERCIAL	70	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	1048576 words	3.3	3.3	32	SMALL OUTLINE, SHRINK PITCH	SOP70,.63,32	16	MASK ROMs	.8 mm	70 Cel		1MX32	1M	TIN LEAD	DUAL	R-PDSO-G70		3.6 V	3.1 mm	12.7 mm	Not Qualified	33554432 bit	3 V	USER SELECTABLE 3.3V VCC; CONFIGURABLE AS 1M X 32; PAGE MODE ACCESS TIME 30NS	e0			.00005 Amp	28.57 mm	100 ns
KM23V16000CT-12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		2MX8	2M		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	CONFIGURABLE AS 1M X 16					18.41 mm	120 ns
KM23V16101A-35	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	3/3.3	8	IN-LINE	DIP36,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T36		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V		e0			.03 Amp	45.72 mm	350 ns
KM23V16000A-20	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V		e0			.00005 Amp	52.43 mm	200 ns
KM23C4100A-20	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	52.43 mm	200 ns
K3N7V1000A-GC	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		4MX16	4M		DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	3 V						28.5 mm	100 ns
K3P6V1000F-TC10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		2MX16	2M	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V		e0			.00003 Amp	18.41 mm	100 ns
KM23C16000B-12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	TIN LEAD	DUAL	R-PDIP-T42	3				Not Qualified	16777216 bit			e0			.00005 Amp		120 ns
KS0174-1M	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	16	SMALL OUTLINE	SOP44,.63		MASK ROMs	1.27 mm	70 Cel		512KX16	512K	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	28.5 mm	150 ns
KM23V64000G-12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8388608 words	3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		8MX8	8M		DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	3 V	CONFIGURABLE AS 4M X 16					28.5 mm	120 ns
KM23C16205DSG-12	Samsung	MASK ROM	COMMERCIAL	70	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	5	5	32	SMALL OUTLINE, SHRINK PITCH	SOP70,.63,32	16	MASK ROMs	.8 mm	70 Cel		512KX32	512K	TIN LEAD	DUAL	R-PDSO-G70		5.5 V	3.1 mm	12.7 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 512K X 32; WITH PAGE MODE FUNCTION; PAGE MODE ACCESS TIME 30NS	e0			.00005 Amp	28.57 mm	120 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.