Infineon Technologies MASK ROM 22

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

S19FL128PMF0XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

22 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

Not Qualified

134217728 bit

e3

40

260

.0002 Amp

S19FL128PNF0XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

NO LEAD

22 mA

3/3.3

SMALL OUTLINE

SOLCC8,.3

MASK ROMs

1.27 mm

85 Cel

-40 Cel

MATTE TIN

DUAL

R-PDSO-N8

3

Not Qualified

134217728 bit

e3

40

260

.0002 Amp

AM27X512-70JC

Infineon Technologies

MASK ROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

5

8

CHIP CARRIER

LDCC32,.5X.6

MASK ROMs

1.27 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

5.5 V

Not Qualified

524288 bit

4.5 V

e0

.0001 Amp

70 ns

S19FL064AMF0XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

19 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

67108864 bit

.00005 Amp

S19FL064PMF0XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

38 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

67108864 bit

.0002 Amp

S19FL128PNF0XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

NO LEAD

22 mA

3/3.3

SMALL OUTLINE

SOLCC8,.3

MASK ROMs

1.27 mm

85 Cel

-40 Cel

MATTE TIN

DUAL

R-PDSO-N8

3

Not Qualified

134217728 bit

e3

40

260

.0002 Amp

S19FL128PMF0XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

22 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

Not Qualified

134217728 bit

e3

40

260

.0002 Amp

S19FL064AMA0XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

19 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

67108864 bit

.00005 Amp

S19FL064AMA0XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

19 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

67108864 bit

.00005 Amp

AM27X512-70PC

Infineon Technologies

MASK ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

Not Qualified

524288 bit

4.5 V

e0

.0001 Amp

70 ns

AM27X512-70PI

Infineon Technologies

MASK ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

Not Qualified

524288 bit

4.5 V

e0

.0001 Amp

70 ns

S19FL064PMF0XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

38 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

67108864 bit

.0002 Amp

S19FL032PMF1XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

38 mA

3/3.3

SMALL OUTLINE

SOP8,.3

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G8

Not Qualified

33554432 bit

.0002 Amp

S19FL032AMF0XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

19 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

33554432 bit

.00005 Amp

S19FL032AMA0XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

19 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

33554432 bit

.00005 Amp

S19FL032PMF0XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

38 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

33554432 bit

.0002 Amp

S19FL032AMA0XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

19 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

33554432 bit

.00005 Amp

S19FL064AMF0XXX01

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

19 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

67108864 bit

.00005 Amp

AM27X512-70JI

Infineon Technologies

MASK ROM

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

5

8

CHIP CARRIER

LDCC32,.5X.6

MASK ROMs

1.27 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

TIN LEAD

QUAD

R-PQCC-J32

5.5 V

Not Qualified

524288 bit

4.5 V

e0

.0001 Amp

70 ns

S19FL032PMF0XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

38 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

33554432 bit

.0002 Amp

S19FL032AMF0XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

19 mA

3/3.3

SMALL OUTLINE

SOP16,.4

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

33554432 bit

.00005 Amp

S19FL032PMF1XXX03

Infineon Technologies

MASK ROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

38 mA

3/3.3

SMALL OUTLINE

SOP8,.3

MASK ROMs

1.27 mm

85 Cel

-40 Cel

DUAL

R-PDSO-G8

Not Qualified

33554432 bit

.0002 Amp

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.