SON MRAMs 2

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Width Qualification Maximum Write Cycle Time (tWC) Memory Density Minimum Supply Voltage (Vsup) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

MR25H40CDCR

Everspin Technologies

MRAM

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SYNCHRONOUS

524288 words

3.3

3.3

8

SMALL OUTLINE

SOLCC8,.25

SRAMs

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-N8

3.6 V

1.05 mm

5 mm

Not Qualified

4194304 bit

3 V

NOT SPECIFIED

NOT SPECIFIED

6 mm

MR25H40CDC

Everspin Technologies

MRAM

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SYNCHRONOUS

524288 words

3.3

3.3

8

SMALL OUTLINE

SOLCC8,.25

SRAMs

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-N8

3

3.6 V

1.05 mm

5 mm

Not Qualified

4194304 bit

3 V

6 mm

MRAMs

MRAM, or Magnetoresistive Random-Access Memory, is a type of non-volatile memory technology that uses the magnetic properties of materials to store data. MRAM combines the benefits of both traditional RAM (Random-Access Memory) and non-volatile memory technologies. Here are some key characteristics and features of MRAM:

Non-Volatile: MRAM is non-volatile, meaning it retains data even when the power is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when powered down.

High Speed: MRAM offers fast read and write speeds, similar to traditional SRAM (Static Random-Access Memory). This makes it suitable for applications that require high-speed data access.

Endurance: MRAM has a high endurance, which means it can withstand a large number of write cycles without degradation. This durability is important for applications that involve frequent data updates.

Low Power Consumption: MRAM typically consumes less power compared to some other non-volatile memory technologies like Flash memory. This makes it energy-efficient and suitable for battery-powered devices.

Bit-Addressable: MRAM is bit-addressable, allowing for precise read and write operations at the individual bit level. This granularity is useful in applications where fine data control is required.

Durability: MRAM is known for its robustness and resistance to environmental factors such as radiation and extreme temperatures. This makes it suitable for applications in harsh environments, including aerospace and automotive industries.

Scalability: MRAM technology has been evolving, and efforts are ongoing to increase storage capacity while maintaining its favorable characteristics.

MRAM is used in embedded systems, IoT devices, data storage, and more, where its combination of non-volatility, speed, and endurance makes it beneficial.