130 Other Function Memory ICs 15

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length
MT29C1G12MAADVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C1G12MAACYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C1G12MAAIVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAIYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAAAAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAIVAMD-5ITTR	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAAAAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAABAHAMD-5EIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16				9 mm
MT29C1G12MAAJVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAJYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAACVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C2G24MAABAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16				9 mm
MT29C1G12MAAIYAMR-5AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAADYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C2G24MAABAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.