22 Other Function Memory ICs 20

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Width	Qualification	Memory Density	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
7230	Intel	MEMORY CIRCUIT		22	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE							IN-LINE			2.54 mm							DUAL	R-PDIP-T22	5.08 mm	10.16 mm	Not Qualified			NOT SPECIFIED	NOT SPECIFIED		27.3685 mm
MM5262N	National Semiconductor		COMMERCIAL	22	DIP	32	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		2048 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel		2KX1	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	2048 bit	e0
MK41S80P15	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	22	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	120 mA	4096 words		5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		4KX4	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T22			Not Qualified	16384 bit	e0			.12 Amp		15 ns
MK41S80P12	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	22	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	120 mA	4096 words		5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		4KX4	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T22			Not Qualified	16384 bit	e0			.12 Amp		12 ns
UPD411AC-2	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					200 ns
UPD411C-E	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					350 ns
UPD411C-4	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					135 ns
UPD411D-4	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					135 ns
UPD411D-1	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22			Not Qualified	4096 bit	e0					250 ns
UPD411D	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22			Not Qualified	4096 bit	e0					300 ns
UPD411C-2	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					200 ns
UPD411D-2	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22			Not Qualified	4096 bit	e0					200 ns
UPD411AC-1	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					250 ns
UPD411D-3	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22			Not Qualified	4096 bit	e0					150 ns
UPD411AC	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					300 ns
UPD411C-3	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					150 ns
UPD411D-E	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22			Not Qualified	4096 bit	e0					350 ns
UPD411A-EC	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22			Not Qualified	4096 bit	e0					350 ns
UPD411C-1	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					250 ns
UPD411C	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22			Not Qualified	4096 bit	e0					300 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.