Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
80 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
.08 Amp |
18 ns |
|||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
40 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.0005 Amp |
150 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
120 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
65 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
THROUGH-HOLE |
80 mA |
IN-LINE |
DIP28,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
e0 |
40 ns |
|||||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
e0 |
.001 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.0005 Amp |
120 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
VIDEO DRAM |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
160 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
55 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
250 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
32768 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDSO-G28 |
3.6 V |
3 mm |
8.4 mm |
Not Qualified |
262144 bit |
2.7 V |
10 YEAR DATA RETENTION |
18.3 mm |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.001 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
120 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
VIDEO DRAM |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
140 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
40 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
150 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
60 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
150 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
140 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
.06 Amp |
55 ns |
|||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
90 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
40 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
55 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
200 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
5 |
5 |
SMALL OUTLINE |
SOP28,.45 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
e0 |
40 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
80 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
.08 Amp |
25 ns |
|||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
5 |
5 |
SMALL OUTLINE |
SOP28,.45 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
e0 |
25 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
VIDEO DRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
40 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
150 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
140 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
e0 |
.001 Amp |
120 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
160 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
.06 Amp |
55 ns |
|||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
90 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
30 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
TIN LEAD |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
.06 Amp |
40 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
90 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
25 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
160 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
5 |
5 |
SMALL OUTLINE |
SOP28,.45 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
e0 |
30 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
VIDEO DRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
140 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
40 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
e0 |
.001 Amp |
150 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
VIDEO DRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
105 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
DIP28,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.005 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
Samsung |
VIDEO DRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
95 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
DIP28,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.005 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Samsung |
VIDEO DRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
262144 words |
5 |
5 |
4 |
IN-LINE |
DIP28,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
1048576 bit |
e0 |
80 ns |
|||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
MILITARY |
28 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
90 mA |
65536 words |
5 |
5 |
4 |
CHIP CARRIER |
LCC28,.35X.55 |
Other Memory ICs |
1.27 mm |
125 Cel |
64KX4 |
64K |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N28 |
Not Qualified |
262144 bit |
e0 |
.006 Amp |
120 ns |
||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
MILITARY |
28 |
SON |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
130 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOLCC28,.4 |
Other Memory ICs |
1.27 mm |
125 Cel |
256KX4 |
256K |
-55 Cel |
DUAL |
R-XDSO-N28 |
Not Qualified |
1048576 bit |
.008 Amp |
10 ns |
|||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
MILITARY |
28 |
SON |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
120 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOLCC28,.4 |
Other Memory ICs |
1.27 mm |
125 Cel |
256KX4 |
256K |
-55 Cel |
DUAL |
R-XDSO-N28 |
Not Qualified |
1048576 bit |
.008 Amp |
12 ns |
|||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
MILITARY |
28 |
SON |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
120 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOLCC28,.4 |
Other Memory ICs |
1.27 mm |
125 Cel |
256KX4 |
256K |
-55 Cel |
DUAL |
R-XDSO-N28 |
Not Qualified |
1048576 bit |
.008 Amp |
12 ns |
||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
MILITARY |
28 |
SOJ |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
J BEND |
150 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
125 Cel |
256KX4 |
256K |
-55 Cel |
DUAL |
R-XDSO-J28 |
Not Qualified |
1048576 bit |
.008 Amp |
8 ns |
||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
130 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
110 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
150 mA |
262144 words |
5 |
5 |
4 |
FLATPACK |
FL28,.4 |
Other Memory ICs |
1.27 mm |
125 Cel |
256KX4 |
256K |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
1048576 bit |
.008 Amp |
8 ns |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.