Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
70 mA |
245772 words |
3.3 |
3.3 |
12 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
245772X12 |
245772 |
0 Cel |
TIN |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
IT ALSO REQUIRES 3 TO 5.5V SUPPLY |
e3 |
.01 Amp |
21 ns |
||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
DUAL |
R-PDSO-J40 |
Not Qualified |
2097152 bit |
.01 Amp |
70 ns |
|||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
32768 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
524288 bit |
.0001 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
65 mA |
32768 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
524288 bit |
.002 Amp |
120 ns |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
75 mA |
32768 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
524288 bit |
.0001 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
32768 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
524288 bit |
.002 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
75 mA |
32768 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
524288 bit |
.002 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
32768 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
524288 bit |
.002 Amp |
80 ns |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
32768 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
524288 bit |
.0001 Amp |
80 ns |
||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
200 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
150 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
MILITARY |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
125 Cel |
128X8 |
128 |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
52.18 mm |
||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-20 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
200 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
200 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.25 V |
6 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
52.18 mm |
||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
DUAL |
R-CDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
200 mA |
262144 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
SRAMs |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.005 Amp |
85 ns |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
200 mA |
262144 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
SRAMs |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.005 Amp |
85 ns |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
DUAL |
R-CDIP-T40 |
5.25 V |
6 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
200 mA |
262144 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
SRAMs |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.005 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
MILITARY |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
125 Cel |
128X8 |
128 |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T40 |
5.25 V |
6 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
150 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
DUAL |
R-CDIP-T40 |
5.25 V |
6 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.25 V |
6 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
52.18 mm |
||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
52.18 mm |
||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
200 mA |
262144 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
SRAMs |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.005 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
DUAL |
R-CDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
150 ns |
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|
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
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|
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
70 mA |
245760 words |
3.3 |
3.3 |
12 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
240KX12 |
240K |
0 Cel |
Tin (Sn) |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949120 bit |
3 V |
e3 |
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Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
2097152 bit |
.01 Amp |
70 ns |
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Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
45 mA |
131072 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
50 mA |
131072 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
50 mA |
131072 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
45 mA |
131072 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
45 mA |
131072 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
140 mA |
262144 words |
5 |
5 |
8 |
IN-LINE |
ZIP40,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
ZIG-ZAG |
R-PZIP-T40 |
Not Qualified |
2097152 bit |
.01 Amp |
80 ns |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.