6 Other Function Memory ICs 22

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS2401P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0				3.94 mm
DS2401P+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e3	30	260		3.94 mm
DS2401P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0	20	240		3.94 mm
DS2401P+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e3	30	260		3.94 mm
DS2411P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words			2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	3.76 mm	Not Qualified	64 bit	1.5 V		e0			.000001 Amp	3.94 mm
DS2411P+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words			2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260	.000001 Amp	3.94 mm
DS2411P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words			2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	3.76 mm	Not Qualified	64 bit	1.5 V		e0			.000001 Amp	3.94 mm
DS2411P/TR	Dallas Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words			2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260	.000001 Amp	3.94 mm
DS2411P+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words			2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260	.000001 Amp	3.94 mm
DS2422P/T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND		ASYNCHRONOUS		1024 words		5		1	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		1KX1	1K	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6		6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0				3.94 mm
DS2423P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3	3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	TIN LEAD	DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0				3.94 mm	15000 ns
DS2422P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	COMMON	5	3/5	1	SMALL OUTLINE, LOW PROFILE		SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	1KX1	1K	-40 Cel		DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM					3.94 mm	15000 ns
DS2405P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0				3.94 mm
DS2405P+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e3	30	260		3.94 mm
DS2401V	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE, LOW PROFILE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6		6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0				3.94 mm
DS2423P+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3	3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	MATTE TIN	DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm	3.81 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e3	30	260		3.937 mm	15000 ns
DS2405V	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words				1	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6		6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0				3.94 mm
DS2405P+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e3				3.94 mm
DS2405P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0				3.94 mm
DS2423P+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND		ASYNCHRONOUS		4096 words		3		1	SMALL OUTLINE			1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e3	30	260		3.94 mm
DS2423P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3	3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0	20	240		3.94 mm	15000 ns
DS2423X	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE	BGA6(UNSPEC)	SRAMs	.95 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	TIN LEAD	BOTTOM	1, (1 LINE)	R-PBGA-B6		6 V	.864 mm	1.91 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0				2.85 mm	15000 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.