66 Other Function Memory ICs 219

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K5A3B41YBA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM					11 mm
K5A3A41YTA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM					11 mm
MT28C3214P2FL-11BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16	e1			.000001 Amp	12 mm	110 ns
MT28C3214P2FL-11BWT	Micron Technology	MEMORY CIRCUIT	OTHER	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	110 ns
MT28C3214P2FL-95TWT	Micron Technology	MEMORY CIRCUIT	OTHER	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	95 ns
MT28C3214P2FL-95T	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	95 ns
MT28C3214P2FL-11B	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	110 ns
MT28C3212P2FL-11BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	25 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16	e0			.00006 Amp	12 mm	110 ns
MT28C3214P2FL-95TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	95 ns
MT28C3224P18FL-85BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	1.9 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.7 V	SRAM IS ORGANISED AS 256K X 16	e1			.000001 Amp	12 mm	85 ns
MT28C3212P2FL-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	25 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16	e0			.00006 Amp	12 mm	100 ns
MT28C3214P2FL-95BWT	Micron Technology	MEMORY CIRCUIT	OTHER	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	95 ns
MT28C3224P20FL-80TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	2	FLASH+SRAM	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.8 V	SRAM IS ORGANISED AS 256K X 16	e1			.000001 Amp	12 mm	80 ns
MT28C3214P2FL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16	e1			.000001 Amp	12 mm	110 ns
MT28C3214P2FL-11T	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	110 ns
MT28C3224P20FL-80BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	2	FLASH+SRAM	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.8 V	SRAM IS ORGANISED AS 256K X 16	e1			.000001 Amp	12 mm	80 ns
MT28C3212P2FL-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	25 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16	e0			.00006 Amp	12 mm	100 ns
MT28C3214P2FL-11TWT	Micron Technology	MEMORY CIRCUIT	OTHER	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	110 ns
MT28C3212P2FL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	25 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16	e0			.00006 Amp	12 mm	110 ns
MT28C3224P18FL-85TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	1.9 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.7 V	SRAM IS ORGANISED AS 256K X 16	e1			.000001 Amp	12 mm	85 ns
MT28C3214P2FL-95BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	95 ns
MT28C3212P2NFL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	25 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16	e0			.00006 Amp	12 mm	110 ns
PF38F1010C0ZTL0	Micron Technology	MEMORY CIRCUIT	COMMERCIAL EXTENDED	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 16		30	260		10 mm
MT28C3214P2NFL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16	e1				12 mm
MT28C3214P2FL-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16	e1				12 mm
MT28C3214P2FL-95B	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM	e0			.000001 Amp	12 mm	95 ns
MT28C3214P2FL-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16	e1				12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.