67 Other Function Memory ICs 12

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M36D0R6040B0ZAIF	STMicroelectronics	MEMORY CIRCUIT	OTHER	67	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B67	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	.00011 Amp	12 mm	70 ns
M36D0R6040T0ZAIF	STMicroelectronics	MEMORY CIRCUIT	OTHER	67	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B67	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	.00011 Amp	12 mm	70 ns
M36D0R6040T0ZAIT	STMicroelectronics	MEMORY CIRCUIT	OTHER	67	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B67	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e0	.00011 Amp	12 mm	70 ns
M36D0R6040B0ZAIT	STMicroelectronics	MEMORY CIRCUIT	OTHER	67	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B67	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e0	.00011 Amp	12 mm	70 ns
M36D0R6040B0ZAI	STMicroelectronics	MEMORY CIRCUIT	OTHER	67	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B67	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e0	.00011 Amp	12 mm	70 ns
M36D0R6040B0ZAIE	STMicroelectronics	MEMORY CIRCUIT	OTHER	67	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B67	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	.00011 Amp	12 mm	70 ns
M36D0R6040T0ZAI	STMicroelectronics	MEMORY CIRCUIT	OTHER	67	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B67	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e0	.00011 Amp	12 mm	70 ns
M36D0R6040T0ZAIE	STMicroelectronics	MEMORY CIRCUIT	OTHER	67	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B67	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	.00011 Amp	12 mm	70 ns
MT28C6428P18FM-85TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	67	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	80 mA	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B67	1.9 V	1.4 mm	9 mm	Not Qualified	67108864 bit	1.7 V	SRAM IS ORGANISED AS 512K X 16	e1	.00007 Amp	11.5 mm	85 ns
MT28C6428P20FM-80BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	67	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	80 mA	4194304 words	2	FLASH+SRAM	1.9	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B67	2.2 V	1.4 mm	9 mm	Not Qualified	67108864 bit	1.8 V	SRAM IS ORGANISED AS 512K X 16	e1	.00007 Amp	11.5 mm	80 ns
MT28C6428P18FM-85BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	67	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	80 mA	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B67	1.9 V	1.4 mm	9 mm	Not Qualified	67108864 bit	1.7 V	SRAM IS ORGANISED AS 512K X 16	e1	.00007 Amp	11.5 mm	85 ns
MT28C6428P20FM-80TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	67	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	80 mA	4194304 words	2	FLASH+SRAM	1.9	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B67	2.2 V	1.4 mm	9 mm	Not Qualified	67108864 bit	1.8 V	SRAM IS ORGANISED AS 512K X 16	e1	.00007 Amp	11.5 mm	80 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.