80 Other Function Memory ICs 49

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DSM2150F5V-12T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	80	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3			16	FLATPACK, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256KX16	256K	-40 Cel	TIN/NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G80	3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	3 V	ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY	e3/e4	NOT SPECIFIED	NOT SPECIFIED		12 mm
DSM2150F5V-12T6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	80	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3			16	FLATPACK, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256KX16	256K	-40 Cel		QUAD	S-PQFP-G80	3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	3 V	ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY					12 mm
S71WS064JB0BFI2A1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JA0BAI2A1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JA0BAW2A1	Infineon Technologies	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BFI2Y0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BAI2Y3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BAI2Y2	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BAI2A1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BFW2A1	Infineon Technologies	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BFI2Y3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BAI2Y0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JA0BFI2A1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JA0BFW2A1	Infineon Technologies	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BAW2A1	Infineon Technologies	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
S71WS064JB0BFI2Y2	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00005 Amp		55 ns
M66223FP	Renesas Electronics	MEMORY CIRCUIT		80	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4096 words	5			16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm		4KX16	4K			QUAD	S-PQFP-G80		1.7 mm	12 mm		65536 bit							12 mm
KAB02D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00001 Amp		85 ns
KBB06A300M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00002 Amp		70 ns
KAB04D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KBB06A500M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00002 Amp		70 ns
KBB05B400M-F4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	268435456 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16					13 mm
KBB05A500M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00002 Amp		70 ns
KAB01D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KBB06B400M-F4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	268435456 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16					13 mm
KBB06A300M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KBB05A300M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00002 Amp		70 ns
KAB01D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00001 Amp		85 ns
KAB01D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00001 Amp		85 ns
KBB05A500M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16					13 mm
KAB02D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KAB01D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KBA0201A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B80	3.3 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM				.000006 Amp	11 mm	85 ns
KAB04D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00001 Amp		85 ns
KBB06A500M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16					13 mm
KAB04D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00001 Amp		85 ns
KAB04D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KAB03D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KBA0401A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B80	3.3 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM				.000006 Amp	11 mm	85 ns
KAB03D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00001 Amp		85 ns
KBB05A300M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KBB05B400M-F402	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA			FLASH+PSRAM	2.9,3,3.3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.000001 Amp		70 ns
KBA0301A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B80	3.3 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM				.000006 Amp	11 mm	85 ns
KBB06B400M-F402	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA			FLASH+PSRAM	2.9,3,3.3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.000001 Amp		70 ns
KAB03D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80				Not Qualified							.00001 Amp		85 ns
KAB03D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm
KBA0101A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B80	3.3 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM				.000006 Amp	11 mm	85 ns
KAB02D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80	3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16					12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.