85 Other Function Memory ICs 14

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

MC-24212361F9-E95X-CDX

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

BALL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, FINE PITCH

.8 mm

85 Cel

1MX16

1M

-25 Cel

BOTTOM

R-PBGA-B85

1.95 V

8 mm

16777216 bit

1.65 V

ALSO OPERATES AT 2.6-3.1V, AND 4M X 16 RAM

11 mm

MC-24222311F9-E85X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

HYBRID

BALL

35 mA

FLASH+SRAM

1.8,3.3

GRID ARRAY, FINE PITCH

BGA85,10X12,32

Other Memory ICs

.8 mm

85 Cel

-25 Cel

BOTTOM

R-PBGA-B85

Not Qualified

.00001 Amp

85 ns

MC-24212361F9-D95X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B85

2.1 V

1.21 mm

8 mm

Not Qualified

67108864 bit

1.8 V

SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V

11 mm

MC-22222361F9-E85X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

BALL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B85

1.95 V

1.21 mm

8 mm

Not Qualified

67108864 bit

1.65 V

SRAM IS ORGANISED AS 512K X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY

11 mm

MC-22212361F9-D80X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B85

2.1 V

1.21 mm

8 mm

Not Qualified

67108864 bit

1.8 V

SRAM ORGANISATION IS 256K X 16; SRAM SUPPLY VOLTAGE IS 2.7 TO 3.1V

11 mm

MC-24212361F9-E95X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B85

1.95 V

1.21 mm

8 mm

Not Qualified

67108864 bit

1.65 V

SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V

11 mm

MC-22212361F9-E85X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B85

1.95 V

1.21 mm

8 mm

Not Qualified

67108864 bit

1.65 V

SRAM ORGANISATION IS 256K X 16; SRAM SUPPLY VOLTAGE IS 2.7 TO 3.1V

11 mm

MC-24222311F9-E90X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

HYBRID

BALL

40 mA

FLASH+SRAM

1.8/3,3

GRID ARRAY, FINE PITCH

BGA85,10X12,32

Other Memory ICs

.8 mm

85 Cel

-25 Cel

BOTTOM

R-PBGA-B85

Not Qualified

.00001 Amp

95 ns

MC-24222311F9-E95X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

HYBRID

BALL

40 mA

FLASH+SRAM

1.8/3,3

GRID ARRAY, FINE PITCH

BGA85,10X12,32

Other Memory ICs

.8 mm

85 Cel

-25 Cel

BOTTOM

R-PBGA-B85

Not Qualified

.00001 Amp

95 ns

MC-24212361F9-E85X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B85

1.95 V

1.21 mm

8 mm

Not Qualified

67108864 bit

1.65 V

SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V

11 mm

MC-24212361F9-D85X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B85

2.1 V

1.21 mm

8 mm

Not Qualified

67108864 bit

1.8 V

SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V

11 mm

MC-24212361F9-E10X-CDX

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

BALL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, FINE PITCH

.8 mm

85 Cel

1MX16

1M

-25 Cel

BOTTOM

R-PBGA-B85

1.95 V

8 mm

16777216 bit

1.65 V

ALSO OPERATES AT 2.6-3.1V, AND 4M X 16 RAM

11 mm

MC-22222361F9-D80X-CD5

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

BALL

ASYNCHRONOUS

4194304 words

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B85

2.1 V

1.21 mm

8 mm

Not Qualified

67108864 bit

1.8 V

SRAM IS ORGANISED AS 512K X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY

11 mm

MC-24212361F9-E90X-CDX

Renesas Electronics

MEMORY CIRCUIT

OTHER

85

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

BALL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, FINE PITCH

.8 mm

85 Cel

1MX16

1M

-25 Cel

BOTTOM

R-PBGA-B85

1.95 V

8 mm

16777216 bit

1.65 V

ALSO OPERATES AT 2.6-3.1V, AND 4M X 16 RAM

11 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.