88 Other Function Memory ICs 897

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
RD38F3040L0YTQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B88				Not Qualified									88 ns
MT28C256532W18TFT-F605P856TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256564W18SFT-F70P70TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
PF38F1030W0YCQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B88				Not Qualified							.00011 Amp		70 ns
MT28C256564W18DFT-F705P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			.0002 Amp	12 mm	85 ns
MT28C256532W18DFT-F606P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
RD38F3040L0YUQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL		35 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B88				Not Qualified							.00011 Amp		85 ns
MT28C256532W18DBT-F705P70BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18DBT-F706P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18TBT-F606P856TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18SFT-F70P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
M36W0R5040T5ZAQE	Micron Technology	MEMORY CIRCUIT	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B88				Not Qualified							.00001 Amp		70 ns
MT28C256532W18SFT-F705P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			.00019 Amp	12 mm	70 ns
PF38F4455LLZBQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B88				Not Qualified									88 ns
M36L0R7050U3ZAME	Micron Technology	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V		e1				10 mm
MT28C256564W18SBT-F606P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18SBT-F70P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
M36L0R8060L3ZAME	Micron Technology	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	268435456 bit	1.7 V		e1				10 mm
MT28C256532W18SBT-F705P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18SFT-F70P70TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18TBT-F606P856BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18DBT-F70P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18SBT-F60P70BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
M36W0R6040T1ZAQF	Micron Technology	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1			.00011 Amp	10 mm	70 ns
MT28C256564W18SBT-F605P70BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256564W18TBT-F706P856BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18DFT-F605P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256564W18TFT-F706P706BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
RD38F4044L0YUQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL		35 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B88				Not Qualified							.00011 Amp		85 ns
MT28C256532W18SBT-F60P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256564W18DBT-F60P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256564W18DBT-F70P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18DFT-F606P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
RD38F2030W0ZTQ1	Micron Technology	MEMORY CIRCUIT	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		55 mA			FLASH+PSRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B88				Not Qualified							.000005 Amp
MT28C256564W18DFT-F606P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18SBT-F706P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18DFT-F60P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18DBT-F60P85TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256564W18DFT-F60P70TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18TFT-F606P856TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
RD38F2040W0YUQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B88				Not Qualified							.00011 Amp		70 ns
MT28C256532W18SFT-F705P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			.00019 Amp	12 mm	85 ns
RD38F4050L0ZBQ1	Micron Technology	MEMORY CIRCUIT		88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B88				Not Qualified									88 ns
RD38F4050L0ZBQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B88				Not Qualified									88 ns
MT28C256564W18DBT-F70P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C256532W18SBT-F705P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
PF38F1030W0YTQ2	Micron Technology	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	55 mA	4194304 words	1.8	FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CONTAINS 16 MBIT SRAM, ALSO CONTAINS 64 MBIT FLASH		30	260	.000005 Amp	10 mm
MT28C256564W18TFT-F605P856TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.