Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
2048 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
16384 bit |
NOT SPECIFIED |
NOT SPECIFIED |
25 ns |
|||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
TTL |
J BEND |
CHIP CARRIER |
LDCC28,.5SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
QUAD |
S-PQCC-J28 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
TTL |
J BEND |
5 |
5 |
CHIP CARRIER |
LDCC20,.4SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
QUAD |
S-PQCC-J20 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
125 mA |
1024 words |
5 |
5 |
12 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
1KX12 |
1K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
12288 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.105 Amp |
22 ns |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
1024 words |
11 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
1KX11 |
1K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
11264 bit |
NOT SPECIFIED |
NOT SPECIFIED |
25 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
125 mA |
1024 words |
5 |
5 |
12 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
1KX12 |
1K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
12288 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.105 Amp |
22 ns |
|||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
TTL |
J BEND |
CHIP CARRIER |
LDCC28,.5SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
QUAD |
S-PQCC-J28 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
TTL |
J BEND |
CHIP CARRIER |
LDCC28,.5SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
QUAD |
S-PQCC-J28 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
1024 words |
11 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
1KX11 |
1K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
11264 bit |
NOT SPECIFIED |
NOT SPECIFIED |
25 ns |
|||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
TTL |
J BEND |
CHIP CARRIER |
LDCC28,.5SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
QUAD |
S-PQCC-J28 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
1024 words |
5 |
5 |
12 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
1KX12 |
1K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
12288 bit |
NOT SPECIFIED |
NOT SPECIFIED |
25 ns |
|||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
125 mA |
2048 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC28,.5SQ |
SRAMs |
1.27 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
QUAD |
S-PQCC-J28 |
Not Qualified |
16384 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.105 Amp |
25 ns |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J52 |
3.6 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC44,.7SQ |
FIFOs |
1.27 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J44 |
5.25 V |
4.7 mm |
6 MHz |
16.5862 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
16.5862 mm |
|||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC44,.7SQ |
FIFOs |
1.27 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J44 |
5.25 V |
4.7 mm |
4 MHz |
16.5862 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
16.5862 mm |
|||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC44,.7SQ |
FIFOs |
1.27 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J44 |
5.25 V |
4.7 mm |
4 MHz |
16.5862 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
16.5862 mm |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J52 |
3.6 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC44,.7SQ |
FIFOs |
1.27 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J44 |
5.25 V |
4.7 mm |
6 MHz |
16.5862 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
16.5862 mm |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
262144 words |
3.3 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J52 |
3.6 V |
4.57 mm |
19.1262 mm |
Not Qualified |
2097152 bit |
3 V |
ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY |
e3 |
19.1262 mm |
||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
70 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQCC-J68 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
70 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQCC-J68 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
90 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
1 |
Not Qualified |
e0 |
20 |
225 |
|||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
50 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
1 |
Not Qualified |
e0 |
20 |
225 |
||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
70 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
1 |
Not Qualified |
e0 |
20 |
225 |
|||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
80 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
1 |
Not Qualified |
e0 |
20 |
225 |
|||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
60 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
1 |
Not Qualified |
e0 |
20 |
225 |
|||||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
131072 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQCC-J52 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
131072 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQCC-J52 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
120 ns |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.