TFBGA Other Function Memory ICs 1,155

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT28C64464W30AFW-F70P85KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words		FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e0			.000145 Amp	10 mm	85 ns
MT38L4031A502ZQXZI.XCA	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm		268435456 bit	1.7 V	IT ALSO CONTAINS 64MBIT(4MBIT X 16) PSRAM					10 mm
MT28C64416W18ABW-F706P85KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e1		260	.000115 Amp	10 mm	85 ns
MT28C64416W18ABW-F606P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e1		260	.000115 Amp	10 mm	70 ns
MT28C64464W30ABW-F70KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16	e1				10 mm
MT28C64432W30ABW-F705P70KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words		FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e1		260	.000135 Amp	10 mm	70 ns
PF38F5060M0Y0B0	Micron Technology	MEMORY CIRCUIT	OTHER	105	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel		BOTTOM	R-PBGA-B105	2 V	1.2 mm	9 mm	Not Qualified	536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 8M X 16		30	260	.00016 Amp	11 mm	96 ns
MT28C64416W18AFW-F60KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64416W18ABW-F605P85BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e1		260	.000115 Amp	10 mm	85 ns
MT28C64432W18AFW-F60P70KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e0			.000135 Amp	10 mm	70 ns
MT28C64416W18AFW-F60KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64432W18AFW-F70P85BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e0			.000135 Amp	10 mm	85 ns
MT28C64464W30ABW-F70P85KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words		FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e1		260	.000145 Amp	10 mm	85 ns
MT28C64416W18AFW-F705P85KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e0			.000115 Amp	10 mm	85 ns
MT28C64416W18AFW-F605KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64432W18ABW-F70P70KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e1		260	.000135 Amp	10 mm	70 ns
MT28C64416W18ABW-F60KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64416W30ABW-F705TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64432W18ABW-F70P85BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e1		260	.000135 Amp	10 mm	85 ns
MT28C64464W30ABW-F70P70TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words		FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e1		260	.000145 Amp	10 mm	70 ns
MT28C64416W18AFW-F606P70TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e0			.000115 Amp	10 mm	70 ns
MT28C64416W30AFW-F705P70TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words		FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e0			.000115 Amp	10 mm	70 ns
MT28C64464W18ABW-F60P70TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e1		260	.000145 Amp	10 mm	70 ns
MT28C64416W18ABW-F605KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64416W18ABW-F60P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e1		260	.000115 Amp	10 mm	70 ns
MT28C64464W18AFW-F70P85KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e0			.000145 Amp	10 mm	85 ns
MT28C64416W18AFW-F706KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64432W18AFW-F70KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16	e1				10 mm
MT28C64416W18AFW-F706BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64432W18ABW-F606BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16	e1				10 mm
MT28C64416W30ABW-F705P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words		FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e1		260	.000115 Amp	10 mm	70 ns
MT28C64416W18AFW-F706P70KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e0			.000115 Amp	10 mm	70 ns
MT28C64416W18ABW-F70KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT28C64464W18ABW-F60KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16	e1				10 mm
MT28C64464W18AFW-F60P85BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e0			.000145 Amp	10 mm	85 ns
MT28C64464W18AFW-F705P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e0			.000145 Amp	10 mm	70 ns
MT28C64464W18AFW-F60P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e0			.000145 Amp	10 mm	70 ns
MT28C64432W18ABW-F706P70KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e1		260	.000135 Amp	10 mm	70 ns
MT28C64432W30AFW-F70P85TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words		FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e0			.000135 Amp	10 mm	85 ns
MT28C64432W18AFW-F60KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16	e1				10 mm
MT28C64416W18AFW-F606P85TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e0			.000115 Amp	10 mm	85 ns
MT29C4G48MAPLCJQ-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel		BOTTOM	S-PBGA-B152	1.95 V	1.1 mm	14 mm	Not Qualified	2097152 bit	1.7 V						14 mm
MT29C8G96MAYBADKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm	10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16					13 mm
MT29C4G48MAPLCJQ-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM	S-PBGA-B152	1.95 V	1.1 mm	14 mm	Not Qualified	2097152 bit	1.7 V		e8	30	260		14 mm
MT29C2G48MAKLCJI-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	128KX16	128K	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	1.1 mm	12 mm	Not Qualified	2097152 bit	1.7 V						12 mm
MT29C8G96MAZBADKD-5IT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm	10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29C4G96MAYBACKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm	10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29C4G96MAZBACKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm	10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.