TSOP2 Other Function Memory ICs 53

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR2A16ACYS35	Freescale Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
MR2A16AVYS35	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	105 Cel		256KX16	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V					18.41 mm
MR0A16ACYS35	Freescale Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	165 mA	262144 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		256KX16	256K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
MR2A16AYS35	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
MR0A16AYS35	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	155 mA	262144 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
MR256A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR256A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR256A08BCYS35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR2A16ATS35C	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
MR256A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V				.007 Amp	18.41 mm	35 ns
MR0A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	131072 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K	0 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V				.007 Amp	18.41 mm	35 ns
MR2A08AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS	135 mA	262144 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		256KX8	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.02 Amp	18.41 mm	35 ns
MR2A16AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		18.41 mm
MR2A08AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS	135 mA	262144 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		256KX8	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.02 Amp	18.41 mm	35 ns
MR0A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	131072 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K	0 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V				.007 Amp	18.41 mm	35 ns
MR0A16AYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	155 mA	65536 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		64KX16	64K	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
MR2A16AVYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
MR0A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	131072 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V				.007 Amp	18.41 mm	35 ns
MR2A16AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		18.41 mm
MR1A16AVYS35	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	165 mA	131072 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	105 Cel		128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
MR0A16AVYS35	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	165 mA	131072 words		3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	105 Cel		128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V	e3	40	260	.028 Amp	18.41 mm	35 ns
XC17S05VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	53984 bit	4.75 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	54544 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		54544 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	54544 bit	3 V	e3	30	260		4.9 mm
XC17S20VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	178144 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S20XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	179160 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S30VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	247968 bit	4.75 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		53984 words		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		53984X1	53984	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		3.9 mm	Not Qualified	53984 bit	4.5 V	e3	30	260		4.9 mm
XC17S10XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs	1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95752 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S30XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S20XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		179160 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		179160X1	179160	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	179160 bit	3 V	e3	30	260		4.9 mm
XC17S30VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		247968 words		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		247968X1	247968	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		3.9 mm	Not Qualified	247968 bit	4.5 V	e3	30	260		4.9 mm
XC17S30XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		54544 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		54544X1	54544	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	54544 bit	3 V	e3	30	260		4.9 mm
XC17S05VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	53984 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S10VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		95008 words		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		95008X1	95008	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		3.9 mm	Not Qualified	95008 bit	4.5 V	e3	30	260		4.9 mm
XC17S20XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	179160 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S10XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95752 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	54544X1	54544	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	54544 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S20XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	179160 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S30XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S10XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95752 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05VOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		53984 words		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		53984X1	53984	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm		3.9 mm	Not Qualified	53984 bit	4.75 V	e3	30	260		4.9 mm
XC17S10VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95008 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S30VOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		247968 words		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		247968X1	247968	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm		3.9 mm	Not Qualified	247968 bit	4.75 V	e3	30	260		4.9 mm
XC17S10VOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs	1.27 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95008 bit	4.75 V	e3	30	260	.00005 Amp	4.9 mm
XC17S10XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs	1.27 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95752 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S30XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e0	30	225	.00005 Amp	4.9 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.