VBGA Other Function Memory ICs 104

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length
S70KL1281DABHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	134217728 bit	2.7 V				8 mm
S70KL1281DABHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	134217728 bit	2.7 V				8 mm
S27KL0641DABHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KL0641DABHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KL0641DABHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KS0641DPBHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm	67108864 bit	1.7 V				8 mm
S70KS1281DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel	BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm	134217728 bit	1.7 V				8 mm
S27KS0641DPBHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm	67108864 bit	1.7 V				8 mm
S27KS0641DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm	67108864 bit	1.7 V				8 mm
S27KL0641DABHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S71KL512SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	64MX8	64M	-40 Cel	BOTTOM	R-PBGA-B24	3		1 mm	6 mm	536870912 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S27KL0641DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KS0641DPBHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DGBHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DGBHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DABHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DGBHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DGBHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DABHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DABHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DABHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KL0641DABHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KL0641DABHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KL0641DABHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KL0641DABHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KS0641DABHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KL0641DABHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KS0641DABHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DPBHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DGBHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KL0641DABHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KS0641DABHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KL0641DABHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KL0641DABHV020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KS0641DGBHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DGBHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KL0641DABHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KL0641DABHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KS0641DPBHV020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm	67108864 bit	1.7 V				8 mm
S27KS0641DGBHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KS0641DPBHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S27KL0641DABHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm	67108864 bit	2.7 V				8 mm
S27KS0641DPBHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	8388608 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	8MX8	8M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S71KL512SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	64MX8	64M	-40 Cel	BOTTOM	R-PBGA-B24	3		1 mm	6 mm	536870912 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S71KL256SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	32MX8	32M	-40 Cel	BOTTOM	R-PBGA-B24	3		1 mm	6 mm	268435456 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S71KL256SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	32MX8	32M	-40 Cel	BOTTOM	R-PBGA-B24			1 mm	6 mm	268435456 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S70KS1281DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel	BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.