VLGA Other Function Memory ICs 48

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M36W108AT100ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	100 ns
M36W108AT100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108B100ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108B120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AB120ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	120 ns
M36W108AB120ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108B120ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108T120ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108T120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AB100ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	100 ns
M36W108B120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108B100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AT100ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	100 ns
M36W108B100ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108B120ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AT120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	120 ns
M36W108T120ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AT120ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108T100ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AT120ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108B120ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108AB100ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	100 ns
M36W108AB120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	120 ns
M36W108T100ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AT100ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108T100ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108T120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AB120ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108AT100ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	100 ns
M36W108B100ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AB100ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AT120ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	120 ns
M36W108B120ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108T120ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108T120ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108AB100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108T100ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AB100ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108T100ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AT100ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AT120ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108AB100ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	100 ns
M36W108AB120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	120 ns
M36W108B100ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words			8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108T100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AB120ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108AT120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	120 ns
M36W108B100ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words	FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.