ROUND Other Function Memory ICs 73

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
DS1963L-F5+	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4096 words			1	DISK BUTTON				70 Cel	4KX1	4K	-40 Cel	MATTE TIN	END	O-MEDB-N2		6 V	Not Qualified	4096 bit	2.8 V	e3
DS9104-075	Maxim Integrated	MEMORY CIRCUIT				ROUND	METAL	NO	1	CMOS	UNSPECIFIED			65536 words			1	SPECIAL SHAPE					64KX1	64K		TIN LEAD	UNSPECIFIED	O-MXSS-X			Not Qualified	65536 bit		e0
DS9104-090	Maxim Integrated	MEMORY CIRCUIT				ROUND	METAL	NO	1	CMOS	UNSPECIFIED			65536 words			1	SPECIAL SHAPE					64KX1	64K		TIN LEAD	UNSPECIFIED	O-MXSS-X			Not Qualified	65536 bit		e0
DS1991L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1152 words		3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel	1152X1	1152	-40 Cel		END	O-MEDB-N2		6 V	Not Qualified	1152 bit	2.8 V	e0	NOT SPECIFIED	NOT SPECIFIED		15000 ns
DS9092R-000	Maxim Integrated	MEMORY CIRCUIT		2		ROUND	METAL	NO	1	CMOS	THROUGH-HOLE							CYLINDRICAL								TIN LEAD	BOTTOM	O-MBCY-T2			Not Qualified			e0
DS9092R-L00	Maxim Integrated	MEMORY CIRCUIT		2		ROUND	METAL	NO	1	CMOS	THROUGH-HOLE							CYLINDRICAL								TIN LEAD	BOTTOM	O-MBCY-T2			Not Qualified			e0
DS2405/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		64 words		3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel	64X1	64	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V	Not Qualified	64 bit	2.8 V	e0
DS2400T-XXX	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE			64 words	5		1	CYLINDRICAL				85 Cel	64X1	64	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		5.5 V	Not Qualified	64 bit	4.5 V	e0
DS2435	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	1.5 mA	32 words	3.6	3.6/6.4	8	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel	32X8	32	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6.4 V	Not Qualified	256 bit	2.5 V	e0
DS2436B+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	1.5 mA	256 words		2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel	256X1	256	-40 Cel	MATTE TIN	BOTTOM	O-PBCY-T3		10 V	Not Qualified	256 bit	2.4 V	e3	30	260
DS2401T-SL	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		64 words	5	3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel	64X1	64	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V	Not Qualified	64 bit	2.8 V	e0
DS2401T	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		64 words		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel	64X1	64	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V	Not Qualified	64 bit	2.8 V	e0
DS2401/T&R/SL	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		64 words	5	3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel	64X1	64	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V	Not Qualified	64 bit	2.8 V	e0
DS2405	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		64 words		3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel	64X1	64	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V	Not Qualified	64 bit	2.8 V	e0
DS2436B/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	1.5 mA	256 words		2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel	256X1	256	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		10 V	Not Qualified	256 bit	2.4 V	e0
DS2434-E	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	ASYNCHRONOUS	1.5 mA	256 words		3.6/6.4	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel	256X1	256	-40 Cel		BOTTOM	O-XBCY-W3		6.4 V	Not Qualified	256 bit	3.6 V				.000003 Amp
DS2434+	Maxim Integrated	MEMORY CIRCUIT		3		ROUND	PLASTIC/EPOXY	NO	1		WIRE							CYLINDRICAL								MATTE TIN	BOTTOM	O-PBCY-W3			Not Qualified			e3
DS2405T	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		64 words			1	CYLINDRICAL				85 Cel	64X1	64	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		6 V	Not Qualified	64 bit	2.8 V	e0
DS2434	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	WIRE		1.5 mA			3.6/6.4		CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	O-PBCY-W3	1		Not Qualified			e0
DS2436B	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	1.5 mA	256 words		2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel	256X1	256	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		10 V	Not Qualified	256 bit	2.4 V	e0
DS2436B+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	1.5 mA	256 words		2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel	256X1	256	-40 Cel	MATTE TIN	BOTTOM	O-PBCY-T3		10 V	Not Qualified	256 bit	2.4 V	e3	30	260
DS2405+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		64 words		3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel	64X1	64	-40 Cel	MATTE TIN	BOTTOM	O-PBCY-T3		6 V	Not Qualified	64 bit	2.8 V	e3
DS2400-XXX	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE			64 words	5		1	CYLINDRICAL				85 Cel	64X1	64	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3		5.5 V	Not Qualified	64 bit	4.5 V	e0
DS2436	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		1.5 mA	256 words		2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel	256X1	256	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified	256 bit		e0
DS2405+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		64 words		3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel	64X1	64	-40 Cel	MATTE TIN	BOTTOM	O-PBCY-T3		6 V	Not Qualified	64 bit	2.8 V	e3		250

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.