COMMERCIAL EXTENDED Other Function Memory ICs 105

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
M36L0T7050B2ZAQ	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words		FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16			10 mm	85 ns
NAND256W3M4AZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	16777216 words	3	FLASH+SDRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel	BOTTOM	R-PBGA-B149		3.6 V	1.2 mm	10 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
M36L0T7050T2ZAQE	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words		FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16	40	260	10 mm	85 ns
M36P0R9070E0ZACF	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,9X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	8 mm	Not Qualified	536870912 bit	1.7 V	PSRAM IS ORGANISED AS 8M X 16BIT	40	260	11 mm	70 ns
M36L0T7060B2ZAQE	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words		FLASH+PSRAM	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 4M X 16	40	260	10 mm	85 ns
NAND01GR4N5AZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX16	64M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	1073741824 bit	1.7 V	LPSDRAM IS ORGANISED AS 32M X 16BIT, SYNCHRONOUS BURST MODE ALSO POSSIBLE.			13.5 mm
M36L0R7060B1ZAQF	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 4M X 16	40	260	10 mm
NAND01GW3M2BZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.2 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
NAND512W3M2BZC5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
M36L0T7060B2ZAQF	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words		FLASH+PSRAM	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 4M X 16	40	260	10 mm	85 ns
NAND256R4M3CZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
NAND256W3M4BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	16777216 words	3	FLASH+SDRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel	BOTTOM	R-PBGA-B149		3.6 V	1.2 mm	10 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
NAND512R4M5CZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
M36P0R9070E0ZAQF	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	8 mm	Not Qualified	536870912 bit	1.7 V				11 mm
M36L0T7060T2ZAQT	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words		FLASH+PSRAM	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 4M X 16			10 mm	85 ns
NAND256R3M0BZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	10.5 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13 mm
NAND01GW3M2AZC5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
NAND01GW3M2CZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.2 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
NAND512R3M0BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	67108864 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	64MX8	64M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	10.5 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13 mm
NAND256R3M0BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	10.5 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13 mm
NAND256R4M3CZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
NAND01GR3N6AZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	10.5 mm	Not Qualified	1073741824 bit	1.7 V	LPSDRAM IS ORGANISED AS 32M X 16BIT, SYNCHRONOUS BURST MODE ALSO POSSIBLE.			13 mm
NAND512R3M0BZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	67108864 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	64MX8	64M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	10.5 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13 mm
M36L0R7060L1ZAMF	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	67108864 words	1.8	FLASH+PSRAM	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	64MX32	64M	-25 Cel	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	2147483648 bit	1.7 V				10.05 mm
M36L0R7060U1ZAMF	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	67108864 words	1.8	FLASH+PSRAM	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	64MX32	64M	-25 Cel	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	2147483648 bit	1.7 V				10.05 mm
NAND01GW3M2BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.2 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
M36P0R9070E0ZACE	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,9X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	8 mm	Not Qualified	536870912 bit	1.7 V	PSRAM IS ORGANISED AS 8M X 16BIT	40	260	11 mm	70 ns
NAND512R3M0AZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	67108864 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	64MX8	64M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	10.5 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13 mm
NAND256R4M3AZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
M36P0R9070E0ZAQE	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	8 mm	Not Qualified	536870912 bit	1.7 V				11 mm
NAND256W3M4CZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	16777216 words	3	FLASH+SDRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel	BOTTOM	R-PBGA-B149		3.6 V	1.2 mm	10 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
M36L0T7050T2ZAQF	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words		FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16	40	260	10 mm	85 ns
NAND512R4M3BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
NAND01GW3M2AZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.2 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
NAND512R3M0CZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	67108864 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	64MX8	64M	-30 Cel	BOTTOM	R-PBGA-B107		1.95 V	1.2 mm	10.5 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13 mm
NAND512R4M5CZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
NAND01GW3M2CZC5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
SRIX4K-W4/XXX	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	128 words	3			32	UNCASED CHIP				85 Cel	128X32	128	-20 Cel	UPPER	X-XUUC-N		3.5 V			Not Qualified	4096 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED
NAND01GR4N5AZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX16	64M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	1073741824 bit	1.7 V	LPSDRAM IS ORGANISED AS 32M X 16BIT, SYNCHRONOUS BURST MODE ALSO POSSIBLE.			13.5 mm
NAND512W3M2AZC5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
NAND01GW3M2CZC5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
NAND01GW3M2BZC5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel	BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32	40	260	13 mm
M36L0T7060T2ZAQE	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words		FLASH+PSRAM	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 4M X 16	40	260	10 mm	85 ns
NAND512R4M3AZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel	BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16	40	260	13.5 mm
M24SR04-GMC5T/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	524288 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	80 Cel	512KX8	512K	-25 Cel	DUAL	R-PDSO-N8	1	5.5 V	.6 mm	2 mm		4194304 bit	2.4 V				3 mm
M24SR04-YMN5/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3			1	SMALL OUTLINE			1.27 mm	80 Cel	4KX1	4K	-25 Cel	DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		4096 bit	2.7 V				4.9 mm
M24SR04-YDW5/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	80 Cel	4KX1	4K	-25 Cel	DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm		4096 bit	2.7 V				4.4 mm
M24SR04-GDW5/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	80 Cel	4KX1	4K	-25 Cel	DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm		4096 bit	2.4 V				4.4 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.