Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
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|
Intel |
MEMORY CIRCUIT |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
5 mA |
524288 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
20 |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
1.75 mm |
100 MHz |
3.9 mm |
4194304 bit |
2.7 V |
e3 |
30 |
260 |
NOR TYPE |
.00005 Amp |
4.9 mm |
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|
Intel |
MEMORY CIRCUIT |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
20 mA |
16777216 words |
3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
20 |
1.27 mm |
85 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.65 mm |
100 MHz |
7.5 mm |
134217728 bit |
2.7 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00006 Amp |
10.3 mm |
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|
Intel |
MEMORY CIRCUIT |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
IN-LINE |
2.54 mm |
DUAL |
R-PDIP-T22 |
5.08 mm |
10.16 mm |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
27.3685 mm |
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|
Intel |
MEMORY CIRCUIT |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
8388608 words |
3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
20 |
1.27 mm |
85 Cel |
3-STATE |
8MX8 |
8M |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.65 mm |
100 MHz |
7.5 mm |
67108864 bit |
2.7 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00005 Amp |
10.3 mm |
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|
Intel |
MEMORY CIRCUIT |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
20 |
1.27 mm |
85 Cel |
3-STATE |
4MX8 |
4M |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
100 MHz |
3.9 mm |
33554432 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00005 Amp |
4.9 mm |
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Intel |
MEMORY CIRCUIT |
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Intel |
MEMORY CIRCUIT |
COMMERCIAL |
RECTANGULAR |
UNSPECIFIED |
1 |
CMOS |
ASYNCHRONOUS |
1099511627776 words |
8 |
70 Cel |
1TX8 |
1T |
0 Cel |
8796093022208 bit |
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Intel |
MEMORY CIRCUIT |
COMMERCIAL |
RECTANGULAR |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
257698037760 words |
8 |
70 Cel |
240GX8 |
240G |
0 Cel |
2061584302080 bit |
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Intel |
MEMORY CIRCUIT |
COMMERCIAL |
1 |
CMOS |
515396075520 words |
8 |
70 Cel |
480GX8 |
480G |
0 Cel |
4123168604160 bit |
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|
Intel |
MEMORY CIRCUIT |
COMMERCIAL |
1 |
CMOS |
3518437208883.2 words |
8 |
55 Cel |
3.2T X 8 |
3.2T |
0 Cel |
28147497671065.6 bit |
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Intel |
OTP ROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
1024 words |
COMMON |
8 |
IN-LINE |
DIP24,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
8192 bit |
e0 |
450 ns |
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Intel |
MEMORY CIRCUIT |
COMMERCIAL |
RECTANGULAR |
UNSPECIFIED |
1 |
CMOS |
ASYNCHRONOUS |
161061273600 words |
8 |
70 Cel |
150GX8 |
150G |
0 Cel |
1288490188800 bit |
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Intel |
MEMORY CIRCUIT |
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Intel |
MEMORY CIRCUIT |
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Intel |
MEMORY CIRCUIT |
COMMERCIAL |
RECTANGULAR |
UNSPECIFIED |
1 |
CMOS |
ASYNCHRONOUS |
161061273600 words |
8 |
70 Cel |
150GX8 |
150G |
0 Cel |
1288490188800 bit |
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Intel |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
256 words |
COMMON |
8 |
IN-LINE |
DIP24,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
256X8 |
256 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
2048 bit |
e0 |
1000 ns |
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Intel |
MEMORY CIRCUIT |
OTHER |
DIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
137438953472 words |
8 |
85 Cel |
128GX8 |
128G |
0 Cel |
DUAL |
R-XDMA-N |
1099511627776 bit |
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Intel |
COMMERCIAL |
18 |
DIP |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
1024 words |
SEPARATE |
1 |
IN-LINE |
DIP18,.3 |
Other Memory ICs |
2.54 mm |
70 Cel |
1KX1 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T18 |
Not Qualified |
1024 bit |
e0 |
300 ns |
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Intel |
MEMORY CIRCUIT |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
171798691840 words |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
160GX8 |
160G |
0 Cel |
UNSPECIFIED |
X-XXMA-N |
1374389534720 bit |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
Intel |
MEMORY CIRCUIT |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
171798691840 words |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
160GX8 |
160G |
0 Cel |
UNSPECIFIED |
X-XXMA-N |
1374389534720 bit |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.