Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
NAND256W3M0AZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
NAND01GW4M3CZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M28F201-200XP6R	STMicroelectronics
NAND512R3M0BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		67108864 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	64MX8	64M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13 mm
NAND256W4M3AZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
TS71180BCJ	STMicroelectronics
NAND256R3M0BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13 mm
M36DR432CA10ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words	2	FLASH+SRAM	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	2.1 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.9 V	ALSO CONTAINS 256K X 16 SRAM	e1			.00001 Amp	12 mm	100 ns
TS27C64CP20	STMicroelectronics
M28F221-120N6	STMicroelectronics
M76DW52004BA90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	90 ns
M36W416TG85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1			.00001 Amp	12 mm	85 ns
M36W416BG70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1			.00001 Amp	12 mm	70 ns
NAND256W3M5AZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
HCC40108BD	STMicroelectronics		MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE						3/18		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel			-55 Cel		DUAL	R-XDIP-T24				Not Qualified
NAND256R3M5BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND512R3M0AZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
M36DR432A100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	100 ns
M36DR232A120ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	120 ns
LR164-SBN81XX	STMicroelectronics	MEMORY CIRCUIT				UNSPECIFIED	UNSPECIFIED	YES			NO LEAD								UNCASED CHIP									UPPER	X-XUUC-N				Not Qualified
NAND256R4M3CZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B149	1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13.5 mm
M36W108T100ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words				8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108B120ZM6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
NAND01GR3N6AZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		134217728 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	128MX8	128M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	1073741824 bit	1.7 V	LPSDRAM IS ORGANISED AS 32M X 16BIT, SYNCHRONOUS BURST MODE ALSO POSSIBLE.					13 mm
IMSB417-5	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		4194304 words	5			8	MICROELECTRONIC ASSEMBLY				50 Cel	4MX8	4M	0 Cel		UNSPECIFIED	R-XXMA-T16	5.25 V			Not Qualified	33554432 bit	4.75 V	SRAM IS CONFIGURED AS 64 K X 8
NAND01GW4M0AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
M36WT864BF10ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96	2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM IS ORGANIZED AS 512K X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00002 Amp	14 mm	100 ns
TS27C64CQ25	STMicroelectronics
NAND256W4M3AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
PSD8131V70JT	STMicroelectronics	MEMORY CIRCUIT		54		SQUARE	PLASTIC/EPOXY	YES			J BEND								CHIP CARRIER									QUAD	S-PQCC-J54				Not Qualified
NAND256R4M4CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M8813F1Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V						10 mm
NAND512R3M0BZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		67108864 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	64MX8	64M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13 mm
M36W0R6050T1ZAQE	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1				10 mm	70 ns
NAND256R4M2CZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
M36W108T120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words				8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
NAND256W3M4CZBF	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B149	3.6 V	1.2 mm	10 mm	Not Qualified	268435456 bit	2.5 V			40	260		13.5 mm
NAND512R3M3BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GR3N5AZB5E	STMicroelectronics
M36W0R6050T0ZAQT	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16	e0			.0001 Amp	10 mm	85 ns
NAND256W4M0AZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
NAND256W4M5BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GW4M4CZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND512R4M2CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
STPAY-BLUEAMB-22	STMicroelectronics	MEMORY CIRCUIT
M36W108AB120ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M76DW63000A70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0			.0001 Amp	11.6 mm	70 ns
T74LS323M1	STMicroelectronics

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.