42 OTP ROM 187

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M27C160-150XB1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	e3	.0001 Amp	52.455 mm	150 ns
M27C160-150XS6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e0	.0001 Amp	36.83 mm	150 ns
M27C160-70S6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0	.0001 Amp	36.83 mm	70 ns
M27C800-90B6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3	.00005 Amp	52.455 mm	90 ns
M27C160-120S6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0	.0001 Amp	36.83 mm	120 ns
M27C322-80P3	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	52.455 mm	80 ns
M27C800-100B6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3	.00005 Amp	52.455 mm	100 ns
M27C160-120XS6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e0	.0001 Amp	36.83 mm	120 ns
M27C322-100B6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	52.455 mm	100 ns
M27C322-100B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	52.455 mm	100 ns
M27C160-90B6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e3	.0001 Amp	52.455 mm	90 ns
M27C322-80S3	STMicroelectronics	OTP ROM	AUTOMOTIVE	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	DIP42,.6		OTP ROMs	1.778 mm	125 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	36.83 mm	80 ns
M27C160-120B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e3	.0001 Amp	52.455 mm	120 ns
M27C322-80P6	STMicroelectronics	OTP ROM	AUTOMOTIVE	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	52.455 mm	80 ns
M27C322-80B6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	52.455 mm	80 ns
M27C160-90XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	e3	.0001 Amp	52.455 mm	90 ns
M27C160-90S6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0	.0001 Amp	36.83 mm	90 ns
M27C160-70B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e3	.0001 Amp	52.455 mm	70 ns
M27C800-150XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V		e3	.00005 Amp	52.455 mm	120 ns
M27C160-100B6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e3	.0001 Amp	52.455 mm	100 ns
M27C160-70S1	STMicroelectronics	OTP ROM	COMMERCIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0	.0001 Amp	36.83 mm	70 ns
M27C322-100S6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	DIP42,.6		OTP ROMs	1.778 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	36.83 mm	100 ns
M27C322-80P1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	52.455 mm	80 ns
M27C160-100XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	e3	.0001 Amp	52.455 mm	100 ns
M27C160-90S1	STMicroelectronics	OTP ROM	COMMERCIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0	.0001 Amp	36.83 mm	90 ns
M27C160-150B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	IN-LINE		8		2.54 mm	85 Cel		1MX16	1M	-40 Cel		DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V				52.455 mm	150 ns
M27C160-100XB1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	e3	.0001 Amp	52.455 mm	100 ns
M27C322-80S1	STMicroelectronics	OTP ROM	COMMERCIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	DIP42,.6		OTP ROMs	1.778 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	36.83 mm	80 ns
M27C322-100S3	STMicroelectronics	OTP ROM	AUTOMOTIVE	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	DIP42,.6		OTP ROMs	1.778 mm	125 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	36.83 mm	100 ns
M27C160-100XS6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e0	.0001 Amp	36.83 mm	100 ns
M27C160-90XS6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e0	.0001 Amp	36.83 mm	90 ns
M27C160-120XS1	STMicroelectronics	OTP ROM	COMMERCIAL	42	SDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE, SHRINK PITCH	SDIP42,.6	8	OTP ROMs	1.778 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e0	.0001 Amp	36.83 mm	120 ns
M27C160-120XB1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	e3	.0001 Amp	52.455 mm	120 ns
M27C800-90XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V		e3	.00005 Amp	52.455 mm	90 ns
MT26C1600-8	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.00002 Amp		8 ns
MT26C1600-15V	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.000015 Amp		15 ns
MT26C1600-12	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.00002 Amp		12 ns
MT26C1600-10	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.00002 Amp		10 ns
MT26C1600-12V	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.000015 Amp		12 ns
MT26C1601-10	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.001 Amp		100 ns
MT26C1601-8	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.001 Amp		80 ns
MT26C1601-12	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.001 Amp		120 ns
MT26C1600-20V	Micron Technology		COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42				Not Qualified	16777216 bit			e0	.000015 Amp		20 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.