6 OTP ROM 29

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

DS2502P-E48/T&R

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

SYNCHRONOUS

.005 mA

1024 words

COMMON

3/5

1

SMALL OUTLINE, LOW PROFILE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e0

.000005 Amp

3.94 mm

DS2502P-E48+T&R

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

.005 mA

1024 words

COMMON

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.81 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

.000005 Amp

3.937 mm

DS2502P-E48

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

SYNCHRONOUS

.005 mA

1024 words

COMMON

3/5

1

SMALL OUTLINE, LOW PROFILE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Tin/Lead (Sn85Pb15)

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e0

20

240

.000005 Amp

3.94 mm

DS2502P-E48+

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

.005 mA

1024 words

COMMON

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

.000005 Amp

3.94 mm

DS2502P/T&R

Maxim Integrated

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e0

20

240

3.94 mm

15000 ns

DS2502P+T&R

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

128 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

3.94 mm

DS2502P

Maxim Integrated

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Tin/Lead (Sn85Pb15)

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e0

20

240

3.94 mm

15000 ns

DS2502P+

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

3.94 mm

15000 ns

DS2502P-E64

Maxim Integrated

OTP ROM

INDUSTRIAL

6

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

1024 words

1

85 Cel

1KX1

1K

-40 Cel

Tin/Lead (Sn85Pb15)

DUAL

R-PDSO-C6

1

6 V

Not Qualified

1024 bit

2.8 V

e0

20

240

DS2502P-E64+

Analog Devices

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

SYNCHRONOUS

1024 words

5

1

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

3.94 mm

DS2505P/T&R

Maxim Integrated

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

ASYNCHRONOUS

16384 words

COMMON

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

16KX1

16K

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e0

3.94 mm

15000 ns

DS2505P+T&R

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

ASYNCHRONOUS

16384 words

COMMON

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

16KX1

16K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

3.94 mm

15000 ns

DS2406P/T&R

Maxim Integrated

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

3

3/5

1

SMALL OUTLINE

SOC6,.17

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e0

20

240

3.94 mm

DS2406P+T&R

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

4

3/5

1

SMALL OUTLINE

SOC6,.17

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

3.94 mm

DS2505P

Maxim Integrated

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

ASYNCHRONOUS

16384 words

COMMON

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

16KX1

16K

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e0

245

3.94 mm

15000 ns

DS2505P+

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

ASYNCHRONOUS

16384 words

COMMON

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

16KX1

16K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

3.94 mm

15000 ns

DS2406P

Maxim Integrated

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

3

3/5

1

SMALL OUTLINE

SOC6,.17

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e0

20

240

3.94 mm

DS2406P+

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

4

3/5

1

SMALL OUTLINE

SOC6,.17

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

3.94 mm

DS2502PU-1176+

Analog Devices

OTP ROM

6

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

1024 words

1

85 Cel

1KX1

1K

-40 Cel

DUAL

R-PDSO-C6

6 V

1024 bit

2.8 V

DS2506P-UNW

Analog Devices

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

SYNCHRONOUS

8192 words

8

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

65536 bit

2.8 V

MICROLAN COMPATIBLE

e0

3.94 mm

DS2505PV

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

SYNCHRONOUS

2048 words

8

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

e0

3.94 mm

DS2502C-UNW

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

128 words

5

8

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

128X8

128

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e0

3.94 mm

DS2505V

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

ASYNCHRONOUS

16384 words

5

1

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

16KX1

16K

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e0

3.94 mm

DS2502PV

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

1

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

1KX1

1K

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e0

3.94 mm

DS2406V

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

3

3/5

1

SMALL OUTLINE, LOW PROFILE

SOC6,.17

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e0

3.94 mm

DS2406X

Maxim Integrated

OTP ROM

INDUSTRIAL

6

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

ASYNCHRONOUS

1024 words

3

3/5

1

GRID ARRAY, VERY THIN PROFILE

FLIP CHIP

SRAMs

1.2 mm

85 Cel

1KX1

1K

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B6

6 V

.864 mm

1.91 mm

Not Qualified

1024 bit

2.8 V

e0

2.85 mm

DS2502P-UNW

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

SYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE, LOW PROFILE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e0

3.94 mm

DS2505P-UNW

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

SYNCHRONOUS

2048 words

COMMON

3/5

8

SMALL OUTLINE, LOW PROFILE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

2KX8

2K

-40 Cel

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

3.94 mm

DS2502V

Maxim Integrated

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE, LOW PROFILE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e0

3.94 mm

15000 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.