TO-92 OTP ROM 30

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
DS2502	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0				15000 ns
DS2502+	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3		250		15000 ns
DS2502/T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0				15000 ns
DS2502+T&R	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3		250		15000 ns
BQ2022ALPR	Texas Instruments	OTP ROM	COMMERCIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1KX1	1K	0 Cel	Matte Tin (Sn)	BOTTOM	O-XBCY-W3	5.5 V	5.34 mm	.01667 MHz	4.3 mm	Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e3	NOT SPECIFIED	NOT SPECIFIED	4.3 mm
DS2505	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	CYLINDRICAL	SIP3,.1	Other Memory ICs	2.54 mm	85 Cel		16KX1	16K	-40 Cel	Tin/Lead (Sn85Pb15)	BOTTOM	O-PBCY-T3	6 V				Not Qualified	16384 bit	2.8 V	MICROLAN COMPATIBLE	e0	20	240		15000 ns
DS2505+	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	CYLINDRICAL	SIP3,.1	Other Memory ICs	2.54 mm	85 Cel		16KX1	16K	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM	O-PBCY-T3	6 V				Not Qualified	16384 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	250		15000 ns
BQ2022ALPRE3	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	MATTE TIN	BOTTOM	O-XBCY-W3	5.5 V		.01667 MHz		Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e3
BQ2026LPR	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON		3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel	Matte Tin (Sn)	BOTTOM	O-XBCY-T3	5.5 V	5.34 mm	.01667 MHz	4.3 mm	Not Qualified	1536 bit	2.65 V		e3	NOT SPECIFIED	NOT SPECIFIED	4.3 mm
DS2505/T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	CYLINDRICAL	SIP3,.1	Other Memory ICs	2.54 mm	85 Cel		16KX1	16K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	16384 bit	2.8 V	MICROLAN COMPATIBLE	e0				15000 ns
DS2505+T&R	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	CYLINDRICAL	SIP3,.1	Other Memory ICs	2.54 mm	85 Cel		16KX1	16K	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM	O-PBCY-T3	6 V				Not Qualified	16384 bit	2.8 V	MICROLAN COMPATIBLE	e3		250		15000 ns
BQ2022LPRE3	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	MATTE TIN	BOTTOM	O-PBCY-W3	5.5 V		.01667 MHz		Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e3
BQ2024LPR	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel		BOTTOM	O-XBCY-W3	5.5 V		.01667 MHz		Not Qualified	1536 bit	2.65 V	ORGANIZED AS 6 PAGES OF 32 BYTES EACH		NOT SPECIFIED	NOT SPECIFIED
BQ2022LPR	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	MATTE TIN	BOTTOM	O-PBCY-W3	5.5 V		.01667 MHz		Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e3
DS2502-E64+	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words		5		1	CYLINDRICAL				85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V		e3		250
DS2506-UNW	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	COMMON		3/5	8	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	65536 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2406+T&R	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words		4	3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V		e3		250
DS25051AT	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		16384 words				1	CYLINDRICAL				85 Cel		16KX1	16K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	16384 bit	2.8 V		e0
DS25051A	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		16384 words				1	CYLINDRICAL				85 Cel		16KX1	16K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	16384 bit	2.8 V		e0
DS25021AT	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words				1	CYLINDRICAL				85 Cel		1KX1	1K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V		e0
DS25021A	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words				1	CYLINDRICAL				85 Cel		1KX1	1K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V		e0
DS2406+	Analog Devices	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words		4	3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V		e3		250
DS2505T	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		16384 words		5		1	CYLINDRICAL				85 Cel		16KX1	16K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	16384 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2502T	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0				15000 ns
DS2502TR+T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		128 words		5		8	CYLINDRICAL				85 Cel		128X8	128	-40 Cel	MATTE TIN	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3
DS2406T	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words		3	3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V		e0
DS2406/T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words		3	3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V		e0
DS2502-UNW	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	COMMON	5	3/5	8	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2406	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words		3	3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	1024 bit	2.8 V		e0
DS2505-UNW	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	COMMON		3/5	8	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		2KX8	2K	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3	6 V				Not Qualified	16384 bit	2.8 V	MICROLAN COMPATIBLE	e0

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.