WDIP OTP ROM 19

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27W201-80F6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE, WINDOW			2.54 mm	85 Cel		256KX8	256K	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm		2097152 bit	2.7 V						41.885 mm	80 ns
M27W201-200F6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE, WINDOW			2.54 mm	85 Cel		256KX8	256K	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm		2097152 bit	2.7 V						41.885 mm	100 ns
M27W201-120F6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE, WINDOW			2.54 mm	85 Cel		256KX8	256K	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm		2097152 bit	2.7 V						41.885 mm	100 ns
M27W201-100F6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE, WINDOW			2.54 mm	85 Cel		256KX8	256K	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm		2097152 bit	2.7 V						41.885 mm	100 ns
M27W201-150F6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE, WINDOW			2.54 mm	85 Cel		256KX8	256K	-40 Cel		DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm		2097152 bit	2.7 V						41.885 mm	100 ns
WS57C191C-35P	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.83 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			.025 Amp	31.75 mm	35 ns	12.75
WS57C291C-35S	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			.025 Amp	32.005 mm	35 ns	12.75
WS57C43C-35S	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0			.03 Amp	32.005 mm	35 ns
5962-8873501LX	STMicroelectronics	OTP ROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		2048 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0				32.005 mm
WS57C43C-25S	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0			.03 Amp	32.005 mm	25 ns
WS57C191C-25P	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.83 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			.025 Amp	31.75 mm	25 ns	12.75
WS57C291C-45S	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			.025 Amp	32.005 mm	45 ns	12.75
WS57C256F-35P	STMicroelectronics	OTP ROM	COMMERCIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-PDIP-T28	5.5 V	4.83 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	36.83 mm	35 ns	12.75
WS57C43C-45S	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0			.03 Amp	32.005 mm	45 ns
WS57C191C-45P	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.83 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			.025 Amp	31.75 mm	45 ns	12.75
WS57C256F-55P	STMicroelectronics	OTP ROM	COMMERCIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	4.83 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0005 Amp	36.83 mm	55 ns	12.75
WS57C291C-25S	STMicroelectronics	OTP ROM	COMMERCIAL	24	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			.025 Amp	32.005 mm	25 ns	12.75
WS57C256F-45P	STMicroelectronics	OTP ROM	COMMERCIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-PDIP-T28	5.5 V	4.83 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	36.83 mm	45 ns	12.75
UPD2716D	Renesas Electronics		COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-CDIP-T24	5.25 V	5.5 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	LG-MAX	e0				33.5 mm	390 ns	25

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.